Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-247-3 JFETs RoHS |
| Mfr. Part # | UF3C120080K3S |
| Package | TO-247-3 |
| Model Number | UF3C120080K3S |
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Product Specification
| Description | TO-247-3 JFETs RoHS | Mfr. Part # | UF3C120080K3S |
| Package | TO-247-3 | Model Number | UF3C120080K3S |
The UF3C120080K3S is a Silicon Carbide (SiC) Cascode JFET designed for high-performance power applications. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. The UF3C120080K3S offers ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, especially when used with recommended RC-snubbers. Key advantages include very low switching losses and a low intrinsic capacitance. It is suitable for a wide range of applications including EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, and Induction Heating.
| Parameter | Symbol | Test Conditions | Value | Unit |
| MAXIMUM RATINGS | ||||
| Drain-source Voltage | VDS | 1200 | V | |
| Gate-source Voltage | VGS | DC | -25 to +25 | V |
| Continuous Drain Current (Note 1) | ID | TC = 25 C | 33 | A |
| Continuous Drain Current (Note 1) | ID | TC = 100 C | 24 | A |
| Pulsed Drain Current (Note 2) | IDM | TC = 25 C | 77 | A |
| Single Pulsed Avalanche Energy (Note 3) | EAS | L = 15 mH, IAS = 2.8 A | 58.5 | mJ |
| Power Dissipation | Ptot | TC = 25 C | 254.2 | W |
| Maximum Junction Temperature | TJ,max | 175 | C | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | C | |
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 250 | C | |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, Junction-to-Case | RJC | 0.45 - 0.59 | C/W | |
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) | ||||
| TYPICAL PERFORMANCE - STATIC | ||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 1200 | V |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 25 C | 10 | A |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 175C | 50 | A |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 25 C | 80 | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 125 C | 130 | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 175 C | 172 | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 - 6 | V |
| TYPICAL PERFORMANCE - REVERSE DIODE | ||||
| Diode Continuous Forward Current (Note 4) | IS | TC = 25 C | 33 | A |
| Diode Pulse Current (Note 5) | IS,pulse | TC = 25 C | 77 | A |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 25 C | 1.5 - 2 | V |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 175 C | 2 | V |
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 25 C | 212 | nC |
| Reverse Recovery Time | trr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 25 C | 23 | ns |
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 150 C | 124 | nC |
| Reverse Recovery Time | trr | VDS = 800 V, IS = 20 A, VGS = -5 V, RG_EXT = 10 , di/dt = 2300 A/s, TJ = 150 C | 13 | ns |
| TYPICAL PERFORMANCE - DYNAMIC | ||||
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 1500 | pF |
| Output Capacitance | Coss | 100 | pF | |
| Reverse Transfer Capacitance | Crss | 2.1 | pF | |
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 800 V, VGS = 0 V | 59 | pF |
| Effective Output Capacitance, Time Related | Coss(tr) | 136 | pF | |
| Stored Energy in Coss | Eoss | VDS = 800 V, VGS = 0 V | 19 | J |
| Total Gate Charge | QG | VDS = 800 V, ID = 20 A, VGS = -5 V to 15 V | 51 | nC |
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 20 A, TJ = 25 C | 26 | ns |
| Rise Time | tr | VDS = 800 V, ID = 20 A, TJ = 25 C | 17 | ns |
| Turn-off Delay Time | td(off) | VDS = 800 V, ID = 20 A, TJ = 25 C | 57 | ns |
| Fall Time | tf | VDS = 800 V, ID = 20 A, TJ = 25 C | 19 | ns |
| Turn-on Energy Including RS Energy | EON | VDS = 800 V, ID = 20 A, TJ = 25 C | 500 | J |
| Turn-off Energy Including RS Energy | EOFF | VDS = 800 V, ID = 20 A, TJ = 25 C | 85 | J |
| Total Switching Energy Including RS Energy | ETOTAL | VDS = 800 V, ID = 20 A, TJ = 25 C | 585 | J |
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 20 A, TJ = 150 C | 26 | ns |
| Rise Time | tr | VDS = 800 V, ID = 20 A, TJ = 150 C | 16 | ns |
| Turn-off Delay Time | td(off) | VDS = 800 V, ID = 20 A, TJ = 150 C | 58 | ns |
| Fall Time | tf | VDS = 800 V, ID = 20 A, TJ = 150 C | 19 | ns |
| Turn-on Energy Including RS Energy | EON | VDS = 800 V, ID = 20 A, TJ = 150 C | 482 | J |
| Turn-off Energy Including RS Energy | EOFF | VDS = 800 V, ID = 20 A, TJ = 150 C | 87 | J |
| Total Switching Energy Including RS Energy | ETOTAL | VDS = 800 V, ID = 20 A, TJ = 150 C | 569 | J |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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