Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-247 Single IGBTs RoHS |
| Mfr. Part # | VBP165I80 |
| Package | TO-247 |
| Model Number | VBP165I80 |
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Product Specification
| Description | TO-247 Single IGBTs RoHS | Mfr. Part # | VBP165I80 |
| Package | TO-247 | Model Number | VBP165I80 |
The VBP165I80 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for use in telecommunications, lighting, consumer electronics, industrial equipment, and renewable energy systems, including server and telecom power supplies, HID lighting, fluorescent ballast lighting, ATX power supplies, welding, battery chargers, solar inverters, and switch-mode power supplies (SMPS).
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V | |||
| Gate-Emitter Voltage | VGE | 20 | V | |||
| Continuous Collector Current | IC | TC=25 | 160 | A | ||
| Continuous Collector Current | IC | TC=100 | 80 | A | ||
| Pulsed Collector Current | ICM | 240 | A | |||
| Maximum Power Dissipation | PD | TC = 25 C | 510 | W | ||
| Maximum Power Dissipation | PD | TC = 100 C | 260 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +175 | C | ||
| Short Circuit Withstand Time | tSC | VGE= 15V, VCE400V, TC=150 | 3 | s | ||
| Short Circuit Withstand Time | tSC | VGE= 15V, VCE330V, TC=100 | 5 | s | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 260 | C | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 250 A | 650 | V | ||
| Gate-Source Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V,VGE = 0 V,TJ = 25 C | 1 | 20 | A | |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V,VGE = 0 V,TJ = 150 C | 1000 | A | ||
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGS = 20 V | 100 | nA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 80 A | 1.42 | 1.7 | V | |
| Forward Transconductance | gfs | VCE = 20 V, IC = 80 A | 40 | S | ||
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | 8400 | pF | ||
| Output Capacitance | Coes | 230 | pF | |||
| Reverse Transfer Capacitance | Cres | 80 | pF | |||
| Total Gate Charge | Qg | IC = 80 A, VCE = 400 V, VGE = 15 V | 196 | nC | ||
| Gate-Emitter Charge | Qge | 21 | nC | |||
| Gate to Collector Charge | Qgc | 23 | nC | |||
| Turn-On Delay Time | td(on) | VCE = 400 V , VGE = 0 /15V, IC = 80 A, Rg = 10 | 80 | ns | ||
| Rise Time | tr | 75 | ns | |||
| Turn-Off Delay Time | td(off) | 95 | ns | |||
| Fall Time | tf | 35 | ns | |||
| Internal emitter inductance | LE | measured 5 mm | 13 | nH | ||
| Diode Forward Current | IF | 80 | A | |||
| Pulsed Diode Forward Current | IFM | 240 | A | |||
| Diode Forward Voltage | VF | IF = 80 A | 2.1 | 2.5 | V | |
| Reverse Recovery Time | trr | TJ = 25 C, IF = 80 A, dIF/dt = 200 A/s, VR = 400 V | 90 | ns | ||
| Reverse Recovery Charge | Qrr | 0.15 | C | |||
| Reverse Recovery Current | IRRM | 1 | 5 | A | ||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 40 | C/W | |||
| Maximum Junction-to-Case Thermal Resistance | RthJC | 0.5 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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