| Td(off) | 165ns |
| Pd - Power Dissipation | 250W |
| Td(on) | 22ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.5nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Gate Charge(Qg) | 95nC@40A,15V |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 120uJ |
| Turn-On Energy (Eon) | 390uJ |
| Description | IGBT 650V 74A 250W Through Hole TO-247-3 |
| Mfr. Part # | IKW40N65H5 |
| Package | TO-247-3 |
| Model Number | IKW40N65H5 |
View Detail Information
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Product Specification
| Td(off) | 165ns | Pd - Power Dissipation | 250W |
| Td(on) | 22ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.5nF@25V | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | Operating Temperature | -40℃~+175℃@(Tj) |
| Gate Charge(Qg) | 95nC@40A,15V | Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 120uJ | Turn-On Energy (Eon) | 390uJ |
| Description | IGBT 650V 74A 250W Through Hole TO-247-3 | Mfr. Part # | IKW40N65H5 |
| Package | TO-247-3 | Model Number | IKW40N65H5 |
The IKP40N65H5 and IKW40N65H5 are high-speed 5th generation IGBTs featuring TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft antiparallel diodes. These devices offer best-in-class efficiency in hard switching and resonant topologies and serve as plug-and-play replacements for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, they are qualified according to JEDEC for target applications. They are Pb-free and RoHS compliant.
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
| IKP40N65H5 | 650 | 40 | 1.65 | 175 | K40EH5 | PG-TO220-3 |
| IKW40N65H5 | 650 | 40 | 1.65 | 175 | K40EH5 | PG-TO247-3 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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