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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China NPN transistor JTD JTD3904 suitable for electronic circuits general purpose
China NPN transistor JTD JTD3904 suitable for electronic circuits general purpose

  1. China NPN transistor JTD JTD3904 suitable for electronic circuits general purpose

NPN transistor JTD JTD3904 suitable for electronic circuits general purpose

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 200mW
Transition frequency(fT) 300MHz
type NPN
Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23
Mfr. Part # JTD3904
Package SOT-23
Model Number JTD3904

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 100nA
Pd - Power Dissipation 200mW Transition frequency(fT) 300MHz
type NPN Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23 Mfr. Part # JTD3904
Package SOT-23 Model Number JTD3904

Product Overview

The JTD3904 is an NPN transistor designed for general-purpose applications. It offers complementary characteristics to the JTD3904 and is suitable for various electronic circuits. The device is available in a SOT-23 package.

Product Attributes

  • Brand: JTD
  • Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
  • Material: Plastic-Encapsulate Transistors
  • Color: Green molding compound device (if applicable)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=10A, IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=040V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=06V
Collector cut-off currentICEXVCE=30V, VEB(off)=3V50nA
Collector cut-off currentICBOVCB= 60V, IE=0100nA
Emitter cut-off currentIEBOVEB=5V, IC=0100nA
DC current gainhFE(1)VCE=1V, IC=10mA100300
DC current gainhFE(2)VCE=1V, IC=50mA60
DC current gainhFE(3)VCE=1V, IC=100mA30
Collector-emitter saturation voltageVCE(sat)IC=50mA, IB=5mA0.3V
Base-emitter saturation voltageVBE(sat)IC=50mA, IB=5mA0.95V
Transition frequencyfTVCE=20V,IC=10mA, f=100MHz300MHz
Delay timetdVCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA35ns
Rise timetrVCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA35ns
Storage timetsVCC=3V, IC=10mA, IB1= IB2=1mA200ns
Fall timetfVCC=3V, IC=10mA, IB1= IB2=1mA50ns
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC200mA
Collector Power DissipationPC200mW
Thermal Resistance Junction To AmbientRJA625/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150

2504101957_JTD-JTD3904_C42443447.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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