| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4401 2X |
| Package | SOT-23 |
| Model Number | MMBT4401 2X |
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Product Specification
| Current - Collector Cutoff | 100nA | Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 250MHz | type | NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4401 2X | Package | SOT-23 |
| Model Number | MMBT4401 2X |
The MMBT4401 is an NPN switching transistor designed for general-purpose applications. Its robust construction and reliable performance make it suitable for various electronic circuits requiring efficient switching capabilities.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 600 | mA | |||
| Collector Power Dissipation | PC | (Ta=25) | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A ,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEX | VCE=35V, VEB=0.4V | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE1 | VCE=1V, IC=0.1mA | 20 | |||
| DC current gain | hFE2 | VCE=1V, IC=1mA | 40 | |||
| DC current gain | hFE3 | VCE=1V, IC=10mA | 80 | |||
| DC current gain | hFE4 | VCE=1V, IC=150mA | 100 | 300 | ||
| DC current gain | hFE5 | VCE=2V, IC=500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=150mA,IB=15mA | 0.4 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA,IB=50mA | 0.75 | V | ||
| Base-emitter saturation voltage | VBE(sat | IC=150mA,IB=15mA | 0.95 | V | ||
| Base-emitter saturation voltage | VBE(sat | IC=500mA,IB=50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC=20mA,f =100MHz | 250 | MHz | ||
| Delay time | td | VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA | 15 | ns | ||
| Rise time | tr | 20 | ns | |||
| Storage time | ts | VCC=30V, IC=150mA IB1=IB2=15mA | 225 | ns | ||
| Fall time | tf | 60 | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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