| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 250nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 50MHz |
| type | PNP |
| Current - Collector(Ic) | 300mA |
| Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 300V 300mA 50MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA92-TP |
| Package | SOT-23 |
| Model Number | MMBTA92-TP |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 250nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 50MHz |
| type | PNP | Current - Collector(Ic) | 300mA |
| Collector - Emitter Voltage VCEO | 300V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 300V 300mA 50MHz 300mW Surface Mount SOT-23 | Mfr. Part # | MMBTA92-TP |
| Package | SOT-23 | Model Number | MMBTA92-TP |
The MMBTA92 is a PNP Silicon High Voltage Transistor from MCCSEMI.COM, designed for high voltage applications. It features a halogen-free, lead-free, and RoHS-compliant design, making it an environmentally conscious choice. This transistor is suitable for various electronic circuits requiring high voltage handling capabilities.
| Parameter | Symbol | Rating | Unit | Conditions |
| Power Dissipation (Note 2) | PD | 225 | mW | Junction to Ambient |
| Power Dissipation (Note 3) | PD | 300 | mW | Junction to Ambient |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance (Note 2) | 556 | /W | Junction to Ambient | |
| Thermal Resistance (Note 3) | 417 | /W | Junction to Ambient | |
| Collector-Base Voltage | VCBO | -300 | V | |
| Collector-Emitter Voltage | VCEO | -300 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Continuous Collector Current | IC | -300 | mA | |
| Peak Collector Current | ICM | -500 | mA | |
| Collector Cutoff Current | ICBO | -0.25 | A | VCB=-200V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC=-20mA, IB=-2mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC=-10mA, IB=-2mA |
| DC Current Gain | hFE | 60 | VCE=-10V, IC=-30mA | |
| DC Current Gain | hFE | 60 | VCE=-10V, IC=-1mA | |
| DC Current Gain | hFE | 100 | IC=-1mA, IB=0 | |
| DC Current Gain | hFE | 200 | IC=-30mA, IB=-2mA | |
| Collector Output Capacitance | Ccb | 6 | pF | VCB=-20V, IE=0,f=1MHz |
| Collector-Base Breakdown Voltage | V(BR)CBO | -300 | V | IC=-100A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100A, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -300 | V | VEB=-5V, IC=0 |
| Transition Frequency | fT | 50 | MHz | VCE=-20V, IC=-10mA, f=30MHz |
| Emitter Cutoff Current | IEBO | -0.1 | A | VCB=-20V, IE=0,f=1MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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