| Current - Collector Cutoff | 250nA |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 50MHz |
| type | NPN |
| Current - Collector(Ic) | 300mA |
| Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42 1D |
| Package | SOT-23 |
| Model Number | MMBTA42 1D |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 250nA | Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 50MHz | type | NPN |
| Current - Collector(Ic) | 300mA | Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42 1D | Package | SOT-23 |
| Model Number | MMBTA42 1D |
The MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, with a maximum power dissipation of 350mW. It is complementary to the MMBTA92.
| Parameters | Symbol | Value | Unit | Test Condition | Min | Max |
| Collector-Base Voltage | VCBO | 300 | V | |||
| Collector-Emitter Voltage | VCEO | 300 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 300 | mA | |||
| Collector Power Dissipation | PC | 350 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55-+150 | ||||
| Thermal resistance From junction to ambient | RJA | 357 | /W | |||
| Collector-base breakdown voltage | V(BR)CBO | 300 | V | IC=100uA, IE=0 | 300 | |
| Collector-emitter breakdown voltage | V(BR)CEO | 300 | V | IC=1mA, IB=0 | 300 | |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10uA, IC=0 | 5 | |
| Collector cut-off current | ICBO | 250 | nA | VCB=200V, IE=0 | 250 | |
| Emitter cut-off current | IEBO | 100 | nA | VEB=5V, IC=0 | 100 | |
| DC current gain | hFE(1)* | VCE=10V, IC=1mA | 60 | |||
| DC current gain | hFE(2)* | VCE=10V, IC=10mA | 100 | 200 | ||
| DC current gain | hFE(3)* | VCE=10V, IC=30mA | 65 | |||
| Collector-emitter saturation voltage | VCE(sat)* | V | IC=20mA, IB=2mA | 0.20 | ||
| Base -emitter saturation voltage | VBE(sat)* | V | IC=20mA, IB=2mA | 0.90 | ||
| Transition frequency | fT | 50 | MHz | VCE=20V, IC=100mA; f=30MHz |
*Pulse test: pulse width300us, duty cycle2.0%.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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