| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | JTDSS8550W |
| Package | SOT-323 |
| Model Number | JTDSS8550W |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 100MHz |
| type | PNP | Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 200mW Surface Mount SOT-323 | Mfr. Part # | JTDSS8550W |
| Package | SOT-323 | Model Number | JTDSS8550W |
The SS8550W is a PNP bipolar junction transistor (BJT) designed for high collector current applications. It serves as a complementary component to the SS8050W transistor. This device is suitable for various electronic circuits requiring a robust PNP transistor with good current handling capabilities.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -1.5 | A | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=-1V, IC=-800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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