Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 300MHz |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Description | Bipolar (BJT) Transistor 160V 600mA 300MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT5551 |
| Package | SOT-23 |
| Model Number | MMBT5551 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 300MHz |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 160V |
| Description | Bipolar (BJT) Transistor 160V 600mA 300MHz 300mW Surface Mount SOT-23 | Mfr. Part # | MMBT5551 |
| Package | SOT-23 | Model Number | MMBT5551 |
The MMBT5551 is an NPN transistor in a SOT-23 plastic-encapsulate package. It offers a power dissipation of 300mW, high stability, and high reliability. This transistor is complementary to the MMBT5401 and is suitable for general-purpose applications requiring a small outline plastic package.
| Parameter | Symbol | Test Condition | Min | Max | Unit |
| Maximum Ratings & Thermal Characteristics | |||||
| Collector-Base Voltage | VCBO | 180 | V | ||
| Collector-Emitter Voltage | VCEO | 160 | V | ||
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current-Continuous | IC | 600 | mA | ||
| Collector Power Dissipation | PC | 300 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Thermal resistance From junction to ambient | RJA | 416 | /W | ||
| Electrical Characteristics | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100uA, IE=0 | 180 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 160 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10uA, IC=0 | 6 | V | |
| Collector cut-off current | ICBO | VCB=120V, IE=0 | 50 | nA | |
| Emitter cut-off current | IEBO | VEB=4V, IC=0 | 50 | nA | |
| DC current gain | hFE(1) | VCE=5V, IC=1mA | 80 | ||
| hFE(2) | VCE=5V, IC=10mA | 100 | 300 | ||
| hFE(3) | VCE=5V, IC=50mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=10mA, IB=1mA | 0.15 | V | |
| VCE(sat)2 | IC=50mA, IB=5mA | 0.20 | V | ||
| Base -emitter saturation voltage | VBE(sat)1 | IC=10mA, IB=1mA | 1.00 | V | |
| VBE(sat)2 | IC=50mA, IB=5mA | 1.00 | V | ||
| Transition frequency | fT | VCE=10V, IC=10mA,f=100MHz | 100 | 300 | MHz |
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6 | pF | |
| CLASSIFICATION OF hFE(2) | |||||
| HFE RANK | L | H | |||
| RANGE | 100-200 | 200-300 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!