Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 8V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 625mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz Through Hole TO-92 |
| Mfr. Part # | 2N3904X |
| Package | TO-92 |
| Model Number | 2N3904X |
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Product Specification
| Emitter-Base Voltage(Vebo) | 8V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 625mW | Transition frequency(fT) | 300MHz |
| type | NPN | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz Through Hole TO-92 | Mfr. Part # | 2N3904X |
| Package | TO-92 | Model Number | 2N3904X |
NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. Complementary PNP types include 2N3905 and 2N3906. Custom pin configurations are available upon request.
| Parameter | Symbol | 2N3903X Min. | 2N3903X Max. | 2N3904X Min. | 2N3904X Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector Base Voltage | VCBO | 60 | V | |||
| Collector Emitter Voltage | VCEO | 40 | V | |||
| Emitter Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Power Dissipation | Ptot | 625 | mW | |||
| Junction Temperature | Tj | 150 | OC | |||
| Storage Temperature Range | Tstg | -55 | +150 | OC | ||
| Characteristics (Ta = 25 OC) | ||||||
| DC Current Gain (VCE = 1 V, IC = 0.1 mA) | hFE | 20 | 40 | |||
| DC Current Gain (VCE = 1 V, IC = 1 mA) | hFE | 35 | 70 | |||
| DC Current Gain (VCE = 1 V, IC = 10 mA) | hFE | 50 | 100 | |||
| DC Current Gain (VCE = 1 V, IC = 50 mA) | hFE | 30 | 60 | |||
| DC Current Gain (VCE = 1 V, IC = 100 mA) | hFE | 15 | 30 | |||
| Collector Base Cutoff Current (VCB = 30 V) | ICBO | 50 | 50 | nA | ||
| Emitter Base Cutoff Current (VEB = 6 V) | IEBO | 50 | 50 | nA | ||
| Collector Base Breakdown Voltage (IC = 10 A) | V(BR)CBO | 60 | 60 | V | ||
| Collector Emitter Breakdown Voltage (IC = 1 mA) | V(BR)CEO | 40 | 40 | V | ||
| Emitter Base Breakdown Voltage (IE = 10 A) | V(BR)EBO | 6 | 6 | V | ||
| Collector Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) | VCE(sat) | 0.2 | 0.2 | V | ||
| Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5 mA) | VCE(sat) | 0.3 | 0.3 | V | ||
| Base Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) | VBE(sat) | 0.85 | 0.85 | V | ||
| Base Emitter Saturation Voltage (IC = 50 mA, IB = 5 mA) | VBE(sat) | 0.95 | 0.95 | V | ||
| Gain Bandwidth Product (VCE = 20 V, IC = 10 mA, f = 100 MHz) | fT | 250 | 300 | MHz | ||
| Collector Base Capacitance (VCB = 5 V, f = 100 KHz) | Cob | 4 | 4 | pF | ||
| Delay Time (VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA) | td | 35 | 35 | ns | ||
| Rise Time (VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA) | tr | 35 | 35 | ns | ||
| Storage Time (VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA) | ts | 200 | 200 | ns | ||
| Fall Time (VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA) | tf | 50 | 50 | ns | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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