| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 40V |
| Description | Bipolar (BJT) Transistor PNP 40V 100mA 300MHz Surface Mount SOT-23 |
| Mfr. Part # | MMBT3906X |
| Package | SOT-23 |
| Model Number | MMBT3906X |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 300MHz |
| type | PNP | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 40V | Description | Bipolar (BJT) Transistor PNP 40V 100mA 300MHz Surface Mount SOT-23 |
| Mfr. Part # | MMBT3906X | Package | SOT-23 |
| Model Number | MMBT3906X |
The MMBT3906X is a PNP general-purpose transistor featuring epitaxial planar die construction. It offers complementary NPN type availability (MMBT3904), a collector current capability of -200mA, and a low maximum voltage of -40V. This transistor is ideal for medium power amplification and switching applications.
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-base voltage | VCBO | open emitter | -40 | V |
| Collector-emitter voltage | VCEO | open base | -40 | V |
| Emitter-base voltage | VEBO | open collector | -5 | V |
| Collector current (DC) | IC | -200 | mA | |
| Total power dissipation | Ptot | Tamb25C | 200 | mW |
| Storage temperature | Tstg | -55 to +150 | C | |
| Junction temperature | Tj | 150 | C | |
| Collector cut-off current | ICBO | IE = 0; VCB = -40 V | -0.1 | uA |
| Emitter cut-off current | IEBO | IC = 0; VEB =- 5 V | -0.1 | uA |
| DC current gain | hFE | VCE = -1V; IC = -10mA | 100 | |
| DC current gain | hFE | VCE = -1V; IC = -50mA | 60 | |
| DC current gain | hFE | VCE = -1V; IC = -100mA | 30 | |
| DC current gain | hFE | VCE = -1V; IC = -10mA | 300 | |
| Collector-emitter saturation voltage | VCEsat | IC = -10mA; IB = -1mA | -200 | mV |
| Collector-emitter saturation voltage | VCEsat | IC = -50mA; IB = -5mA | -400 | mV |
| Base-emitter saturation voltage | VBEsat | IC = -10mA; IB = -1mA | -850 | mV |
| Base-emitter saturation voltage | VBEsat | IC = -50mA; IB = -5mA | -950 | mV |
| Transition frequency | fT | IC = -10mA; VCE = -20 V; f = 100MHz | 300 | MHz |
| Delay time | td | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 35 | ns |
| Rise time | tr | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 35 | ns |
| Storage time | ts | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 225 | ns |
| Fall time | tr | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 75 | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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