Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 250MHz |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP+PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | JTDMMDT3906DW |
| Package | SOT-363 |
| Model Number | JTDMMDT3906DW |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 250MHz |
| type | PNP | Number | 2 PNP |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor PNP+PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | JTDMMDT3906DW | Package | SOT-363 |
| Model Number | JTDMMDT3906DW |
The MMDT3906DW is an epitaxial planar die construction dual PNP transistor designed for low power amplification and switching applications. It features high DC current gain and fast switching speeds, making it suitable for various electronic circuits.
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Continuous Collector Current | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | Ta=25 | 0.2 | W | ||
| Junction to Ambient Air Thermal Resistance | RJA | 625 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICEX | VCE=-30V,VEB(OFF)=-3V | -50 | nA | ||
| Base cut-off current | IEBO | VEB=-5V,IC=0 | -50 | nA | ||
| DC current gain | hFE(1) | VCE=-1V,IC=-0.1mA | 60 | |||
| hFE(2) | VCE=-1V,IC=-1mA | 80 | ||||
| hFE(3) | VCE=-1V,IC=-10mA | 100 | 300 | |||
| hFE(4) | VCE=-1V,IC=-50mA | 60 | ||||
| hFE(5) | VCE=-1V,IC=-100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA,IB=-1mA | -0.25 | V | ||
| VCE(sat)2 | IC=-50mA,IB=-5mA | -0.4 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| VBE(sat)2 | IC=-50mA,IB=-5mA | -0.95 | V | |||
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K | 4 | dB | ||
| Delay time | td | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Rise time | tr | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Storage time | tS | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 225 | nS | ||
| Fall time | tf | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 75 | nS |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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