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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China medium power NPN transistor JUXING MMBT5551 G1 ideal for switching and
China medium power NPN transistor JUXING MMBT5551 G1 ideal for switching and

  1. China medium power NPN transistor JUXING MMBT5551 G1 ideal for switching and

medium power NPN transistor JUXING MMBT5551 G1 ideal for switching and

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 50nA
Pd - Power Dissipation 300mW
Transition frequency(fT) 100MHz
type NPN
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 160V
Operating Temperature -55℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 300mW Surface Mount SOT-23
Mfr. Part # MMBT5551 G1
Package SOT-23
Model Number MMBT5551 G1

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 50nA
Pd - Power Dissipation 300mW Transition frequency(fT) 100MHz
type NPN Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 160V Operating Temperature -55℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 300mW Surface Mount SOT-23 Mfr. Part # MMBT5551 G1
Package SOT-23 Model Number MMBT5551 G1

MMBT5551 TRANSISTOR (NPN)

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401, offering a versatile solution for various electronic circuits.

Product Attributes

  • Marking: G1
  • Complementary to: MMBT5401

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-Base VoltageVCBO180V
Collector-Emitter VoltageVCEO160V
Emitter-Base VoltageVEBO6V
Collector CurrentIC600mA
Collector Power DissipationPC(Ta=25)300mW
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=0180V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=0160V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=06V
Collector cut-off currentICBOVCB=120V, IE=050nA
Emitter cut-off currentIEBOVEB=4V, IC=050nA
DC current gainhFE(1)VCE=5V, IC=1mA80
hFE(2)VCE=5V, IC=10mA100300
hFE(3)VCE=5V, IC=50mA50
Collector-emitter saturation voltageVCE(sat)1IC=10mA, IB=1mA0.15V
VCE(sat)2IC=50mA, IB=5mA0.2V
Base-emitter saturation voltageVBE(sat)1IC=10mA, IB=1mA1V
VBE(sat)2IC=50mA, IB=5mA1V
Transition frequencyfTVCE=10V,IC=10mA, f=100MHz100300MHz
Collector output capacitanceCobVCB=10V, IE=0, f=1MHz6pF

2410121317_JUXING-MMBT5551-G1_C5365477.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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