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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic
China NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic

  1. China NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic

NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 250mW
Transition frequency(fT) 100MHz
type NPN
Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 25V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 250mW Surface Mount SOT-323
Mfr. Part # JTDSS8050W
Package SOT-323
Model Number JTDSS8050W

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 250mW Transition frequency(fT) 100MHz
type NPN Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 25V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 250mW Surface Mount SOT-323 Mfr. Part # JTDSS8050W
Package SOT-323 Model Number JTDSS8050W

SS8050W Transistor (NPN)

The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'.

Product Attributes

  • Brand: JTD (SHENZHEN JTD ELECTRONICS CO.,LTD)
  • Origin: Shenzhen, China
  • Material: Plastic-Encapsulate Transistor
  • Package Outline: SOT-323

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Collector cut-off current ICEO VCE=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain (hFE(1)) hFE(1) VCE=1V, IC= 100mA 120 400
DC current gain (hFE(2)) hFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT VCE=10V, IC= 50mA, f=30MHz 100 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 250 mW
Thermal Resistance Junction To Ambient RJA 500 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150

2504101957_JTD-JTDSS8050W_C42443449.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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