| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 250mW Surface Mount SOT-323 |
| Mfr. Part # | JTDSS8050W |
| Package | SOT-323 |
| Model Number | JTDSS8050W |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 250mW Surface Mount SOT-323 | Mfr. Part # | JTDSS8050W |
| Package | SOT-323 | Model Number | JTDSS8050W |
The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain (hFE(1)) | hFE(1) | VCE=1V, IC= 100mA | 120 | 400 | ||
| DC current gain (hFE(2)) | hFE(2) | VCE=1V, IC= 800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 15 | pF | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 250 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 500 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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