Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 200W |
| Transition frequency(fT) | 4MHz |
| type | NPN |
| Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 250V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-264 |
| Mfr. Part # | MJL21194 |
| Package | TO-264 |
| Model Number | MJL21194 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 200W | Transition frequency(fT) | 4MHz |
| type | NPN | Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 250V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-264 | Mfr. Part # | MJL21194 |
| Package | TO-264 | Model Number | MJL21194 |
The MJL21194 is a Minos Silicon NPN triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V (min), making it recommended for 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads may significantly decrease product reliability even if operating conditions are within absolute maximum ratings.
| Characteristic | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-base voltage | VCBO | 400 | V | ||||
| Collector-emitter voltage | VCEO | 250 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current | IC | 16 | A | ||||
| Base current | IB | 5 | A | ||||
| Collector power dissipation (Tc=25) | PC | 200 | W | ||||
| Junction temperature | Tj | 150 | |||||
| Storage temperature range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector cut-off current | ICBO | uA | VCB=250V; IE=0 | 10 | |||
| Emitter cut-off current | IEBO | uA | VEB=5V; Ic=0 | 10 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | 250 | V | IC=50mA,IB=0 | |||
| DC current gain | hFE | VCE=5V; IC=8A | 20 | 80 | |||
| DC current gain | hFE(2) | VCE=5V; IC=16A | 8 | ||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=8A; IB=0.8A | 1.4 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=16A; IB=3.2A | 4 | |||
| Base-emitter voltage | VBE | V | VCE=5V;IC=8A | 2.2 | |||
| Transition frequency | fT | MHz | VCE=10V; IC=1A | 4 | |||
| Thermal Characteristics | |||||||
| Junction-to-Case Thermal Resistance | RJC | /W | 0.63 | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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