Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1mA |
| Pd - Power Dissipation | 50W |
| Transition frequency(fT) | 30MHz |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Collector - Emitter Voltage VCEO | 250V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 250V 8A 30MHz 50W Through Hole TO-220 |
| Mfr. Part # | MJE15032G |
| Package | TO-220 |
| Model Number | MJE15032G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1mA |
| Pd - Power Dissipation | 50W | Transition frequency(fT) | 30MHz |
| type | NPN | Current - Collector(Ic) | 8A |
| Collector - Emitter Voltage VCEO | 250V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 250V 8A 30MHz 50W Through Hole TO-220 | Mfr. Part # | MJE15032G |
| Package | TO-220 | Model Number | MJE15032G |
This is a Silicon Bipolar Epitaxial Planar NPN-PNP Matched Power Amplifier Transistor designed for high-fidelity audio power amplifier pre-stage driving. It offers a large output current of 8A, a high breakdown voltage of VCEO 250V, and a wide operating area. The transistor also boasts superior frequency characteristics with fT > 30MHz. It is suitable for continuous load operation under demanding conditions such as high temperature, high voltage, and large current, as well as significant temperature variations. However, reliability may be reduced when operating at maximum current, temperature, and voltage.
| Parameter Name | Symbol | Rating (Tc=25) | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCBO | 250 | V |
| Collector-Emitter Voltage | VCEO | 250 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 8 | A |
| Base Current | IB | 2 | A |
| Collector Power Dissipation | PC | 50 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | TSTG | -55~150 |
| Parameter Name | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Leakage Current | VCB=250V; IE=0 | 1 | mA | ||
| Emitter-Base Breakdown Leakage Current | VEB=5V; Ic=0 | 1 | mA | ||
| Collector-Emitter Breakdown Voltage | IC=5mA,IB=0 | 250 | V | ||
| DC Current Gain | VCE=5V; IC=0.5A | 70 | |||
| Collector-Emitter Saturation Voltage | IC=1A; IB=-100mA | 0.5 | V | ||
| Base-Emitter Voltage | VCE=5V;IC=1A | 1.0 | V | ||
| Characteristic Frequency | VCE=5V; IC=1A | 30 | MHz |
| Parameter | Parameter Description | Typical Value | Condition | Unit |
|---|---|---|---|---|
| Thermal Resistance (Junction to Case) | Junction to Case Temperature | 0.30 | /W |
Notes:
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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