| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | BC817-40HE3-TP |
| Package | SOT-23 |
| Model Number | BC817-40HE3-TP |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 300mW Surface Mount SOT-23 | Mfr. Part # | BC817-40HE3-TP |
| Package | SOT-23 | Model Number | BC817-40HE3-TP |
This NPN small signal transistor, available in the BC817-16HE3 through BC817-40HE3 series, is designed for general-purpose applications. It features a 300mW power dissipation and is housed in a SOT-23 package. The device is AEC-Q101 qualified, Halogen Free, and RoHS compliant, making it suitable for various electronic designs requiring reliable performance and environmental consideration.
| Parameter | Symbol | Rating | Conditions | Unit | BC817-16HE3 | BC817-25HE3 | BC817-40HE3 |
|---|---|---|---|---|---|---|---|
| Collector Current | IC | 500 | mA | ||||
| Peak Collector Current | ICM | 1000 | mA | ||||
| Collector-Emitter Voltage | VCEO | 45 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector-Base Voltage | VCBO | 50 | V | ||||
| Collector Power Dissipation | PC | 300 | mW | ||||
| Operating Junction Temperature Range | -55 to +150 | ||||||
| Storage Temperature Range | -55 to +150 | ||||||
| Thermal Resistance | 417 | Junction to Ambient | /W | ||||
| Collector Cutoff Current | ICBO | 0.1 | VCB=45V, IE=0 | A | |||
| Emitter-Base Cutoff Current | IEBO | 0.1 | VEB=4V, IC=0 | A | |||
| Base-Emitter Voltage | VBE | 1.2 | VCE=1V, IC=500mA | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | VCE=1V, IC=500mA | V | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | IC=500mA, IB=50mA | V | |||
| DC Current Gain | hFE1 | 100-250 | VCE=1V, IC=100mA | 100-250 | 160-400 | 250-600 | |
| DC Current Gain | hFE2 | VCE=1V, IC=500mA, IB=50mA | 600 (Typ) | 600 (Typ) | 600 (Typ) | ||
| Transition Frequency | fT | 100 | VCE=5V, IC=10mA, f=100MHz | MHz | |||
| Collector Capacitance | Cob | 10 | VCB=10V, f=1MHz | pF | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | IC=10mA, IB=0 | V | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | IC=10A, IE=0 | V | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | IE=1A, IC=0 | V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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