| Current - Collector Cutoff | 10uA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 25W |
| Transition frequency(fT) | 4MHz |
| type | NPN |
| Current - Collector(Ic) | 1.2A |
| Collector - Emitter Voltage VCEO | 150V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 150V 1.2A 4MHz Through Hole TO-220 |
| Mfr. Part # | C2073 |
| Package | TO-220 |
| Model Number | C2073 |
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Product Specification
| Current - Collector Cutoff | 10uA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 25W | Transition frequency(fT) | 4MHz |
| type | NPN | Current - Collector(Ic) | 1.2A |
| Collector - Emitter Voltage VCEO | 150V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 150V 1.2A 4MHz Through Hole TO-220 | Mfr. Part # | C2073 |
| Package | TO-220 | Model Number | C2073 |
This product is a power amplifier, designed for TV sound accompaniment and frame output. It is complementary to the A940.
| Parameter Symbol | Description | Minimum | Typical | Maximum | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Tstg | Storage Temperature | -55 | 150 | Ta=25 | ||
| Tj | Junction Temperature | 150 | Ta=25 | |||
| PC | Collector Power Dissipation | 25 | W | Tc=25 | ||
| VCBO | Collector-Base Voltage | 150 | V | Ta=25 | ||
| VCEO | Collector-Emitter Voltage | 150 | V | Ta=25 | ||
| VEBO | Emitter-Base Voltage | 5 | V | Ta=25 | ||
| IC | Collector Current | 1.2 | A | Ta=25 | ||
| BVCBO | Collector-Base Breakdown Voltage | 150 | V | IC=100A, IE=0 | ||
| BVCEO | Collector-Emitter Breakdown Voltage | 150 | V | IC=5mA, IB=0 | ||
| BVEBO | Emitter-Base Breakdown Voltage | 5 | V | IE=1mA, IC=0 | ||
| ICBO | Collector-Base Cut-off Current | 10 | A | VCB=120V, IE=0 | ||
| IEBO | Emitter-Base Cut-off Current | 4 | A | VEB=5V, IC=0 | ||
| hFE | DC Current Gain | 50 | 100 | 210 | VCE=5V, IC=0.5A | |
| VCE(sat) | Collector-Emitter Saturation Voltage | 1.5 | V | IC=1A, IB=0.1A | ||
| fT | Characteristic Frequency | 10 | MHz | VCE=10V, IC=0.5A | ||
| Cob | Common-Base Output Capacitance | 10 | pF | VCB=10V, IE=0, f=1.0 MHz |
Pin Configuration:
1 - Base (B)
2 - Collector (C)
3 - Emitter (E)
Notes:
1. Exceeding the maximum ratings of the device may cause damage or permanent failure. Please do not exceed the absolute maximum ratings during circuit design.
2. When installing a heat sink, pay attention to the torsional moment and smoothness.
3. MOSFETs are sensitive to static electricity and require protection during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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