| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 65V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | BC856B,215 |
| Package | SOT-23 |
| Model Number | BC856B,215 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 100MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 100mA | Collector - Emitter Voltage VCEO | 65V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | BC856B,215 | Package | SOT-23 |
| Model Number | BC856B,215 |
The Nexperia BC856, BC857, and BC858 series are PNP general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, offering low current (max. 100 mA) and low voltage (max. 65 V) capabilities. They are suitable for general-purpose use where reliable performance in a small form factor is required.
| Model | NPN Complement | VCEO (Max) | IC (Max) | VCBO (Max) | hFE Range (Typical) | Marking Code |
|---|---|---|---|---|---|---|
| BC856 | BC846 | -65 V | 100 mA | -80 V | 125 - 475 | 3D% |
| BC856A | BC846A | -65 V | 100 mA | -80 V | 125 - 250 | 3A% |
| BC856B | BC846B | -65 V | 100 mA | -80 V | 220 - 475 | 3B% |
| BC857 | BC847 | -45 V | 100 mA | -50 V | 125 - 800 | 3H% |
| BC857A | BC847A | -45 V | 100 mA | -50 V | 125 - 250 | 3E% |
| BC857B | BC847B | -45 V | 100 mA | -50 V | 220 - 475 | 3F% |
| BC857C | BC847C | -45 V | 100 mA | -50 V | 420 - 800 | 3G% |
| BC858B | BC848B | -30 V | 100 mA | -30 V | 220 - 475 | 3K% |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | BC856; BC856A; BC856B | - | - | -65 | V |
| Collector-Emitter Voltage (VCEO) | BC857; BC857A; BC857B; BC857C | - | - | -45 | V |
| Collector-Emitter Voltage (VCEO) | BC858B (open base) | - | - | -30 | V |
| Collector Current (IC) | Tamb = 25 C unless otherwise specified | - | - | -100 | mA |
| Peak Collector Current (ICM) | Tamb = 25 C unless otherwise specified | - | - | -200 | mA |
| Collector-Base Voltage (VCBO) | BC856; BC856A; BC856B | - | - | -80 | V |
| Collector-Base Voltage (VCBO) | BC857; BC857A; BC857B; BC857C | - | - | -50 | V |
| Collector-Base Voltage (VCBO) | BC858B (open emitter) | - | - | -30 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | -5 | V |
| Total Power Dissipation (Ptot) | Tamb 25 C | - | - | 250 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | C |
| Collector-Base Breakdown Voltage (V(BR)CBO) | BC856; BC856A; BC856B | -80 | - | - | V |
| Collector-Base Breakdown Voltage (V(BR)CBO) | BC857; BC857A; BC857B; BC857C | -50 | - | - | V |
| Collector-Base Breakdown Voltage (V(BR)CBO) | BC858B (IC = -100 A; IE = 0 A) | -30 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | BC856; BC856A; BC856B | -65 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | BC857; BC857A; BC857B; BC857C | -45 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | BC858B (IC = -2 mA; IB = 0 A) | -30 | - | - | V |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | IC = 0 A; IE = -100 A | -5 | - | - | V |
| Collector-Base Cut-off Current (ICBO) | VCB = -30 V; IE = 0 A | - | -1 | -15 | nA |
| Collector-Base Cut-off Current (ICBO) | VCB = -30 V; IE = 0 A; Tj = 150 C | - | - | -4 | A |
| Emitter-Base Cut-off Current (IEBO) | VEB = -5 V; IC = 0 A | - | - | -100 | nA |
| Collector Capacitance (Cc) | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | 4.5 | - | pF |
| Transition Frequency (fT) | VCE = -5 V; IC = -10 mA; f = 100 MHz | 100 | - | - | MHz |
| Noise Figure (NF) | IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200Hz | - | 2 | 10 | dB |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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