Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 10V |
| Pd - Power Dissipation | 300mW |
| DC Current Gain | 30@5mA,5V |
| Resistor Ratio | 1 |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
| Description | 300mW 30@5mA,5V NPN 100mA 50V TSSOP-6(SOT-363) Single Bipolar Transistors RoHS |
| Mfr. Part # | PUMH11-QX |
| Package | TSSOP-6(SOT-363) |
| Model Number | PUMH11-QX |
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Product Specification
| Emitter-Base Voltage(Vebo) | 10V | Pd - Power Dissipation | 300mW |
| DC Current Gain | 30@5mA,5V | Resistor Ratio | 1 |
| type | NPN | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V | Operating Temperature | -65℃~+150℃ |
| Description | 300mW 30@5mA,5V NPN 100mA 50V TSSOP-6(SOT-363) Single Bipolar Transistors RoHS | Mfr. Part # | PUMH11-QX |
| Package | TSSOP-6(SOT-363) | Model Number | PUMH11-QX |
The Nexperia PUMH11-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. Qualified according to AEC-Q101, it is recommended for automotive applications, including low current peripheral driving, control of IC inputs, and as a replacement for general-purpose transistors in digital applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | positive | - | - | 40 | V |
| VI | Input voltage | negative | - | - | -10 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient (free air) | [1] | - | - | 625 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA | 2.5 | 1.8 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz [2] | - | 230 | - | MHz |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb = 25 C [1] | - | - | 300 | mW |
| Rth(j-a) | Thermal resistance junction to ambient (free air) | [1] | - | - | 417 | K/W |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
[2] Characteristics of built-in transistor
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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