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Hefei Purple Horn E-Commerce Co., Ltd.

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China NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current
China NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current

  1. China NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current

NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 300mW
Transition frequency(fT) 150MHz
type NPN
Number -
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 25V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23
Mfr. Part # S8050
Package SOT-23
Model Number S8050

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 300mW Transition frequency(fT) 150MHz
type NPN Number -
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 25V
Operating Temperature -55℃~+150℃ Description Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23
Mfr. Part # S8050 Package SOT-23
Model Number S8050

S8050 TRANSISTOR (NPN)

The S8050 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a continuous collector current of 500 mA and a collector power dissipation of 300 mW. It is complementary to the S8550 transistor.

Product Attributes

  • Brand: Microdiode
  • Package Type: SOT-23
  • Transistor Type: NPN

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 40 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) 25 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) 5 V
Collector Current-Continuous IC (Ta=25 unless otherwise noted) 500 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 300 mW
Junction Temperature Tj (Ta=25 unless otherwise noted) 150
Storage Temperature Tstg (Ta=25 unless otherwise noted) -55 150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC=50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V
Transition frequency fT VCE=6V, IC=20mA, f=30MHz 150 MHz
DC current gain hFE(2) VCE=1V, IC=500mA 50
Collector cut-off current ICEO VCB=20V, IE=0 0.1 A

2411211950_MDD-Microdiode-Semiconductor-S8050_C364312.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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