| Current - Collector Cutoff | 100nA |
| Emitter-Base Voltage(Vebo) | 6V |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 250MHz |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN+PNP 40V 600mA 250MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT4413-TP |
| Package | SOT-363 |
| Model Number | MMDT4413-TP |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 100nA | Emitter-Base Voltage(Vebo) | 6V |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 250MHz |
| type | NPN+PNP | Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN+PNP 40V 600mA 250MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT4413-TP | Package | SOT-363 |
| Model Number | MMDT4413-TP |
The MMDT4413 is a versatile NPN/PNP transistor housed in a SOT-363 package. It features epitaxial planar die construction, halogen-free "Green" device compliance, and meets UL 94 V-0 flammability rating. This device is suitable for various electronic applications requiring reliable switching and amplification characteristics.
| Parameter | Symbol | Rating | Unit | Conditions | NPN Min | NPN Typ | NPN Max | PNP Min | PNP Typ | PNP Max |
|---|---|---|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | V | -40 | ||||||
| Emitter-Base Voltage | VEBO | 6 | V | -5 | ||||||
| Collector-Base Voltage | VCBO | V | -40 | |||||||
| Continuous Collector Current | IC | 600 | mA | -600 | ||||||
| Power Dissipation | PD | 200 | mW | 200 | ||||||
| Thermal Resistance Junction to Ambient | RJA | 625 | C/W | 625 | ||||||
| Collector Cutoff Current | ICBO | 100 | nA | VCB=50V, IE=0 | -100 | |||||
| Base-Emitter Saturation Voltage | VBE(sat) | V | IC=150mA, IB=15mA | 0.75 | 0.95 | -0.75 | -0.95 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=500mA, IB=50mA | 0.4 | -0.75 | |||||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=100A, IE=0 | -40 | |||||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | -5 | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | -40 | ||||||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB=5V, IC=0 | -100 | |||||
| DC Current Gain | hFE | VCE=1V, IC=10mA | 100 | 300 | 30 | |||||
| DC Current Gain | hFE | VCE=1V, IC=150mA | 40 | 225 | 60 | 100 | ||||
| DC Current Gain | hFE | VCE=2V, IC=500mA | 20 | 20 | ||||||
| Transition Frequency | fT | 250 | MHz | VCE=10V, IC=20mA, f=100MHz | 200 | |||||
| Output Capacitance | Cob | 6.5 | pF | VCB=5V, IE=0, f=1MHz | 8.5 | |||||
| Delay Time | td | 15 | ns | VCC=30V, IC=150mA, IB1=15mA | 15 | |||||
| Rise Time | tr | 20 | ns | VCC=30V, IC=150mA, VBE=2V, IB1=15mA | 20 | |||||
| Storage Time | ts | 225 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 225 | |||||
| Fall Time | tf | 30 | ns | 30 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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