Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 520mW |
| Transition frequency(fT) | 30MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 400V 500mA 30MHz 520mW Surface Mount SOT-89 |
| Mfr. Part # | PBHV8540X,115 |
| Package | SOT-89 |
| Model Number | PBHV8540X,115 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 520mW | Transition frequency(fT) | 30MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 400V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 400V 500mA 30MHz 520mW Surface Mount SOT-89 | Mfr. Part # | PBHV8540X,115 |
| Package | SOT-89 | Model Number | PBHV8540X,115 |
The Nexperia PBHV8540X is an NPN high-voltage, low VCEsat transistor designed for medium power applications. Packaged in an SOT89 (SC-62) surface-mounted device (SMD) plastic package, this transistor offers high voltage capability and a low collector-emitter saturation voltage (VCEsat). It features high collector current capability (IC and ICM) and high DC current gain (hFE) at high IC. The PBHV8540X is AEC-Q101 qualified, making it suitable for automotive applications. Key applications include LED drivers for LED chain modules, LCD backlighting, automotive motor management, hook switches for wired telecom, and Switch Mode Power Supplies (SMPS).
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 500 | V |
| VCEO | Collector-emitter voltage (open base) | - | - | 400 | V | |
| IC | Collector current | - | - | 0.5 | A | |
| hFE | DC current gain | VCE = 10 V; IC = 50 mA; Tamb = 25 C | 100 | 200 | - | - |
| VCBO | Collector-base voltage (open emitter) | - | - | 500 | V | |
| VEBO | Emitter-base voltage (open collector) | - | - | 6 | V | |
| ICM | Peak collector current | - | - | 1 | A | |
| IBM | Peak base current | single pulse; tp 1 ms | - | 200 | mA | |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | 0.52 | W | |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | 1.5 | W | |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | - | -55 | 150 | C | |
| Tstg | Storage temperature | - | -65 | 150 | C | |
| Rth(j-a) | Thermal resistance junction to ambient (free air) | [1] | - | 240 | K/W | |
| Rth(j-sp) | Thermal resistance junction to solder point | [2] | - | 83 | K/W | |
| ICBO | Collector-base cut-off current | VCB = 320 V; IE = 0 A; Tamb = 25 C | - | 100 | nA | |
| IEBO | Emitter-base cut-off current | VCB = 320 V; IE = 0 A; Tj = 150 C | - | 10 | A | |
| ICES | Collector-emitter cut-off current | VEB = 4 V; IC = 0 A; Tamb = 25 C | - | 100 | nA | |
| ICES | Collector-emitter cut-off current | VCE = 320 V; VBE = 0 V; Tamb = 25 C | - | 100 | nA | |
| hFE | DC current gain | VCE = 10 V; IC = 50 mA; Tamb = 25 C | 100 | 200 | - | - |
| hFE | DC current gain | VCE = 10 V; IC = 100 mA; tp 300 s; 0.02; Tamb = 25 C; pulsed | 80 | 150 | - | - |
| hFE | DC current gain | VCE = 10 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 10 | 20 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 10 mA; Tamb = 25 C | - | 100 | 200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 20 mA; Tamb = 25 C | - | 60 | 90 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 300 mA; IB = 60 mA; Tamb = 25 C | - | 135 | 250 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 300 mA; IB = 60 mA; Tamb = 25 C | - | 0.91 | 1.1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 300 mA; IB = 60 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | - | V |
| td | Delay time | - | - | 50 | ns | |
| tr | Rise time | - | - | 6200 | ns | |
| ton | Turn-on time | - | - | 6250 | ns | |
| ts | Storage time | - | - | 800 | ns | |
| tf | Fall time | - | - | 2200 | ns | |
| toff | Turn-off time | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 C | - | 3000 | ns | |
| fT | Transition frequency | VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C | - | 30 | MHz | |
| Cc | Collector capacitance | VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 4 | pF | |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | 165 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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