| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 150MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMS8050-H-TP |
| Package | SOT-23 |
| Model Number | MMS8050-H-TP |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 150MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 25V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23 | Mfr. Part # | MMS8050-H-TP |
| Package | SOT-23 | Model Number | MMS8050-H-TP |
The MMS8050 is an NPN silicon plastic-encapsulated transistor designed for various electronic applications. It features a wide operating and storage temperature range of -55 to +150, a thermal resistance of 417/W Junction to Ambient, and a power dissipation of 300 mW. This transistor is Halogen Free available upon request, has a Moisture Sensitivity Level 1, and its epoxy meets UL 94 V-0 flammability rating. It is lead-free finished and RoHS compliant.
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | @ 25C Unless Otherwise Specified |
| Collector-Emitter Voltage | VCEO | 25 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 500 | mA | @ 25C Unless Otherwise Specified |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC=100A, IE=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC=1mA, IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100A, IC=0 |
| Collector Cutoff Current | ICEO | 0.1 | A | VCB=40V, IE=0 |
| Emitter Cutoff Current | IEBO | 0.1 | A | VEB=5V, IC=0 |
| DC Current Gain | hFE(1) | 120-350 | VCE=1V, IC=50mA | |
| DC Current Gain | hFE(2) | 50 | VCE=1V, IC=500mA | |
| Transition Frequency | fT | 150 | MHz | VCE=6V, IC=20mA, f=30MHz |
| Base-Emitter Voltage | VBE | 1.2 | V | IC=500mA, IB=50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | V | IC=500mA, IB=50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.4 | V | IC=500mA, IB=50mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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