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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Durable NPN Darlington Transistor Minos TIP142T Featuring TO-220 Package for
China Durable NPN Darlington Transistor Minos TIP142T Featuring TO-220 Package for

  1. China Durable NPN Darlington Transistor Minos TIP142T Featuring TO-220 Package for

Durable NPN Darlington Transistor Minos TIP142T Featuring TO-220 Package for

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Current - Collector Cutoff 1mA
Pd - Power Dissipation 70W
DC Current Gain 1000
Transition frequency(fT) -
type NPN
Current - Collector(Ic) 8A
Collector - Emitter Voltage VCEO 100V
Operating Temperature -55℃~+150℃
Description 70W 1000 NPN 8A 100V TO-220 Single Bipolar Transistors RoHS
Mfr. Part # TIP142T
Package TO-220
Model Number TIP142T

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 1mA Pd - Power Dissipation 70W
DC Current Gain 1000 Transition frequency(fT) -
type NPN Current - Collector(Ic) 8A
Collector - Emitter Voltage VCEO 100V Operating Temperature -55℃~+150℃
Description 70W 1000 NPN 8A 100V TO-220 Single Bipolar Transistors RoHS Mfr. Part # TIP142T
Package TO-220 Model Number TIP142T

Product Overview

This NPN Darlington Transistor is designed for general-purpose applications requiring high current gain. It offers robust performance with specified voltage and current ratings, making it suitable for various electronic circuits. The device comes in a standard TO-220 package.

Product Attributes

  • Brand: MNS
  • Product Type: NPN Darlington Transistor
  • Package: TO-220

Technical Specifications

Parameter Symbol Description Min. Typ. Max. Unit Test Conditions
LIMIT RATINGS (Ta=25)
Storage Temperature Tstg -55 150
Junction Temperature Tj 150
Collector Power Dissipation (Tc=25) PC 70 W
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 8 A
Base Current IB 0.5 A
ELECTRICAL CHARACTERISTICS (Ta=25)
Collector-Emitter Sustaining Voltage VCEO(SUS) 100 V IC=30mA, IB=0
Collector-Emitter Cutoff Current ICEO 2 mA VCE=50V, IB=0
Collector-Base Cutoff Current ICBO 1 mA VCB=100V, IE=0
Emitter-Base Cutoff Current IEBO 2 mA VEB=5V,IC=0
DC Current Gain HFE(1) 1000 VCE=4V, IC=0.5A
DC Current Gain HFE(2) 1000 VCE=4V, IC=3A
Collector-Emitter Saturation Voltage VCE(sat) 2 V IC=5A,IB=10mA
Collector-Emitter Saturation Voltage VCE(sat) 3 V IC=10A,IB=40mA
Base-Emitter Saturation Voltage VBE(sat) 3.5 V IC=10A,IB=40mA
Base-Emitter On Voltage VBE(on) 3 V VCE=4V, IC=10A
Delay Time tD 0.15 S Vcc=30V,IC=5A
Rise Time tR 0.55 S IB=20mAIB1=IB2
Storage Time tS 2.5 S
Fall Time tF 2.5 S
Package Pinout (TO-220)
Pin 1 Base (B)
Pin 2 Collector (C)
Pin 3 Emitter (E)

Notes:

  • Exceeding the maximum ratings may cause permanent device failure and affect dependability. Ensure circuit design does not exceed absolute maximum ratings.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
  • Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

2412061751_Minos-TIP142T_C6719392.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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