| Current - Collector Cutoff | 1mA |
| Pd - Power Dissipation | 70W |
| DC Current Gain | 1000 |
| Transition frequency(fT) | - |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ |
| Description | 70W 1000 NPN 8A 100V TO-220 Single Bipolar Transistors RoHS |
| Mfr. Part # | TIP142T |
| Package | TO-220 |
| Model Number | TIP142T |
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Product Specification
| Current - Collector Cutoff | 1mA | Pd - Power Dissipation | 70W |
| DC Current Gain | 1000 | Transition frequency(fT) | - |
| type | NPN | Current - Collector(Ic) | 8A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | -55℃~+150℃ |
| Description | 70W 1000 NPN 8A 100V TO-220 Single Bipolar Transistors RoHS | Mfr. Part # | TIP142T |
| Package | TO-220 | Model Number | TIP142T |
This NPN Darlington Transistor is designed for general-purpose applications requiring high current gain. It offers robust performance with specified voltage and current ratings, making it suitable for various electronic circuits. The device comes in a standard TO-220 package.
| Parameter | Symbol | Description | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| LIMIT RATINGS (Ta=25) | |||||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (Tc=25) | PC | 70 | W | ||||
| Collector-Base Voltage | VCBO | 100 | V | ||||
| Collector-Emitter Voltage | VCEO | 100 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | 8 | A | ||||
| Base Current | IB | 0.5 | A | ||||
| ELECTRICAL CHARACTERISTICS (Ta=25) | |||||||
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | 100 | V | IC=30mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | 2 | mA | VCE=50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | 1 | mA | VCB=100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | 2 | mA | VEB=5V,IC=0 | |||
| DC Current Gain | HFE(1) | 1000 | VCE=4V, IC=0.5A | ||||
| DC Current Gain | HFE(2) | 1000 | VCE=4V, IC=3A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | 2 | V | IC=5A,IB=10mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 3 | V | IC=10A,IB=40mA | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 3.5 | V | IC=10A,IB=40mA | |||
| Base-Emitter On Voltage | VBE(on) | 3 | V | VCE=4V, IC=10A | |||
| Delay Time | tD | 0.15 | S | Vcc=30V,IC=5A | |||
| Rise Time | tR | 0.55 | S | IB=20mAIB1=IB2 | |||
| Storage Time | tS | 2.5 | S | ||||
| Fall Time | tF | 2.5 | S | ||||
| Package Pinout (TO-220) | |||||||
| Pin 1 | Base (B) | ||||||
| Pin 2 | Collector (C) | ||||||
| Pin 3 | Emitter (E) | ||||||
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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