| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 0.3W Surface Mount SOT-23-3 |
| Mfr. Part # | MMBT4401 |
| Package | SOT-23-3 |
| Model Number | MMBT4401 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 250MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 0.3W Surface Mount SOT-23-3 | Mfr. Part # | MMBT4401 |
| Package | SOT-23-3 | Model Number | MMBT4401 |
The MMBT4401 is a general-purpose NPN switching transistor designed for various electronic applications. It offers reliable performance with key electrical characteristics suitable for signal amplification and switching circuits.
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VCBO | Collector-Base Voltage | 60 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current -Continuous | 600 | mA | |||
| PC | Collector Power dissipation | 0.3 | W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| RJA | Thermal Resistance, junction to Ambient | 417 | /mW | |||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA, IB = 0 | 40 | V | ||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100uA, IE = 0 | 60 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100uA, IC = 0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 50V, IE = 0 | 40 | uA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC =0 | 0.1 | uA | ||
| hFE1 | DC current gain | VCE = 1V, IC = 150mA | 250 | |||
| hFE2 | DC current gain | VCE = 10V, IC = 20mA, f=100MHz | 300 | |||
| hFE3 | DC current gain | IC = 150mA, IB = 15mA | 1.2 | |||
| hFE4 | DC current gain | IC = 500mA, IB = 50mA | 0.75 | |||
| hFE5 | DC current gain | VCE = 1V, IC=1mA | 80 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.4 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.1 | V | ||
| tr | Rise time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 20 | ns | ||
| td | Delay time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 225 | ns | ||
| ts | Storage time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 60 | ns | ||
| tf | Fall time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 0.1 | us | ||
| fT | Transition frequency | VCE = 30V, VEB =0.4V | 150 | MHZ | ||
| Cib | Capacitance | VCE = 1V, IC=1mA | 20 | pF | ||
| Cob | Capacitance | VCE = 1V, IC=0.1mA | 250 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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