| Current - Collector Cutoff | 20nA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 330mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 800mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 330mW Surface Mount SOT-23 |
| Mfr. Part # | BCW66H-TP |
| Package | SOT-23 |
| Model Number | BCW66H-TP |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 20nA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 330mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 800mA | Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 330mW Surface Mount SOT-23 |
| Mfr. Part # | BCW66H-TP | Package | SOT-23 |
| Model Number | BCW66H-TP |
The BCW66H is an NPN small signal transistor designed for automatic insertion. It features low current and low voltage operation, with an epitaxial planar die construction. This device is halogen-free, moisture sensitive level 1, and meets UL 94 V-0 flammability rating. It is lead-free and RoHS compliant.
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 75 | V | @ 25C Unless Otherwise Specified |
| Collector-Emitter Voltage | VCEO | 45 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 800 | mA | @ 25C Unless Otherwise Specified |
| Peak Collector Current | ICM | 1000 | mA | @ 25C Unless Otherwise Specified |
| Continuous Base Current | IB | 100 | mA | @ 25C Unless Otherwise Specified |
| Peak Base Current | IBM | 200 | mA | TS=79C |
| Power Dissipation | PD | 330 | mW | Mounted on FR-4 Printed-Circuit Board. |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance (Junction to Ambient) | 285 | /W | ||
| Thermal Resistance (Junction to Soldering Point) | 215 | /W | ||
| Collector-Base Cutoff Current | ICBO | 20 | nA | VCB=45V, IE=0 |
| Emitter-Base Cutoff Current | IEBO | 20 | A | VEB=4V, IC=0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | V | IC=500mA, IB=50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.25 | V | IC=100mA, IB=10mA |
| DC Current Gain | hFE(1) | 80 | VCE=1V, IC=10mA | |
| DC Current Gain | hFE(2) | 180 | VCE=10V,IC=20mA,f=100MHz | |
| DC Current Gain | hFE(3) | 250 - 630 | VCE=1V, IC=100mA | |
| DC Current Gain | hFE(4) | 100 | VCE=2V, IC=500mA | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 75 | V | IC=10A, IE=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | V | IC=10mA, IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=10A, IC=0 |
| Transition Frequency | fT | 100 | MHz | VCE=10V,IC=20mA,f=100MHz |
| Collector-Base Capacitance | CCB | 6 | pF | VCB=45V, IE=0, TA=150C |
| Emitter-Base Capacitance | CEB | 60 | pF | VEB=0.5V, f=1MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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