Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz Surface Mount SOT-23 |
| Mfr. Part # | MMSS8050-H-TP |
| Package | SOT-23 |
| Model Number | MMSS8050-H-TP |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 1.5A | Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz Surface Mount SOT-23 |
| Mfr. Part # | MMSS8050-H-TP | Package | SOT-23 |
| Model Number | MMSS8050-H-TP |
The MMSS8050-L is an NPN Silicon Plastic-Encapsulate Transistor in a SOT-23 package. It is designed for applications with a power dissipation capability of 0.3 Watts at 25C ambient temperature, a collector current of 1.5A, and a collector-base voltage of 40V. This transistor offers a wide operating and storage junction temperature range from -55C to +150C.
| Parameter | Symbol | Min | Max | Units | Conditions |
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | --- | Vdc | IC=100Adc, IE=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | --- | Vdc | IC=0.1mAdc, IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5.0 | --- | Vdc | IE=100Adc, IC=0 |
| Collector Cutoff Current | ICBO | --- | 0.1 | Adc | VCB=40Vdc, IE=0 |
| Collector Cutoff Current | ICEO | --- | 0.1 | Adc | VCE=20Vdc, IB=0 |
| Emitter Cutoff Current | IEBO | --- | 0.1 | Adc | VEB=5.0Vdc, IC=0 |
| DC Current Gain | hFE(1) | 120 | 350 | --- | IC=100mAdc, VCE=1.0Vdc |
| DC Current Gain | hFE(2) | 40 | --- | --- | IC=800mAdc, VCE=1.0Vdc |
| Collector-Emitter Saturation Voltage | VCE(sat) | --- | 0.5 | Vdc | IC=800mAdc, IB=80mAdc |
| Base-Emitter Saturation Voltage | VBE(sat) | --- | 1.2 | Vdc | IC=800mAdc, IB=80mAdc |
| Base-Emitter Voltage | VEB | --- | 1.6 | Vdc | IE=1.5Adc |
| Transistor Frequency | fT | 100 | --- | MHz | IC=50mAdc, VCE=10Vdc, f=30MHz |
| Power Dissipation | Pd | --- | 0.3 | Watts | Tamb=25C |
| Collector Current | IC | --- | 1.5 | A | --- |
| Collector-Base Voltage | VCB | --- | 40 | V | --- |
| Operating and Storage Junction Temperature | TJ, TSTG | -55 | +150 | C | --- |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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