| Emitter-Base Voltage(Vebo) | 6V |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 0.6A 300MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT2222A-TP |
| Package | SOT-23 |
| Model Number | MMBT2222A-TP |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 300MHz | type | NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 40V 0.6A 300MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT2222A-TP | Package | SOT-23 |
| Model Number | MMBT2222A-TP |
The MMBT A is an amplifier designed for general purpose applications, ideally suited for automatic insertion. It is a halogen-free, green device meeting Moisture Sensitivity Level 1 and UL 94V-0 flammability rating. This lead-free, RoHS compliant product offers reliable performance with a maximum rating of 150C.
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector Current Peak | ICM | 2 | A | Pulse Width 10s |
| Collector Current Continuous | IC | 1 | A | |
| Collector-Emitter Voltage | VCEO | 30 | V | |
| Emitter Base Voltage | VEBO | 5 | V | |
| Collector Base Voltage | VCBO | 30 | V | |
| Power Dissipation | PD | 1.5 | W | Ambient Temperature 25C |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | Tstg | -55 to 150 | C | |
| Thermal Resistance Junction to Ambient | Rth JA | 83.3 | C/W | |
| Collector Cutoff Current | ICEO | 1 | A | VCE = 30V |
| Base Cutoff Current | IBO | 1 | A | VCE = 30V |
| Fall Time | tf | 10 | ns | VCC = 10V, IC = 1A, RL = 10 |
| Storage Time | ts | 10 | ns | VCC = 10V, IC = 1A, RL = 10 |
| Rise Time | tr | 10 | ns | VCC = 10V, IC = 1A, RL = 10 |
| Delay Time | td | 10 | ns | VCC = 10V, IC = 1A, RL = 10 |
| Noise Figure | NF | 1 | dB | VCE = 5V, IC = 100A, f = 1kHz |
| Input Capacitance | Cibo | 10 | pF | VCE = 5V, IC = 10mA, f = 1MHz |
| Output Capacitance | Cobo | 10 | pF | VCB = 5V, IE = 1mA, f = 1MHz |
| Transition Frequency | fT | 100 | MHz | VCE = 5V, IC = 10mA |
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC = 1A, IB = 100mA |
| Collector Emitter Saturation Voltage | VCE(sat) | 0.3 | V | IC = 1A, IB = 100mA |
| Collector Base Saturation Voltage | VCB(sat) | 0.3 | V | IC = 1A, IB = 100mA |
| Current Gain | hFE | 100 | VCE = 5V, IC = 1A | |
| Base Emitter Breakdown Voltage | V(BR)EBO | 5 | V | IE = 10A |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 30 | V | IC = 10mA |
| Collector Base Breakdown Voltage | V(BR)CBO | 30 | V | IC = 10A |
| Pulse Width | PW | 10 | s | |
| Duty Cycle | DC | 1 | % |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!