| Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 1.5W |
| DC Current Gain | 1000 |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Collector - Emitter Voltage VCEO | 100V |
| Description | 1.5W 1000 NPN 8A 100V DPAK(TO-252) Single Bipolar Transistors RoHS |
| Mfr. Part # | MJD122-TP |
| Package | DPAK(TO-252) |
| Model Number | MJD122-TP |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 10uA | Pd - Power Dissipation | 1.5W |
| DC Current Gain | 1000 | type | NPN |
| Current - Collector(Ic) | 8A | Collector - Emitter Voltage VCEO | 100V |
| Description | 1.5W 1000 NPN 8A 100V DPAK(TO-252) Single Bipolar Transistors RoHS | Mfr. Part # | MJD122-TP |
| Package | DPAK(TO-252) | Model Number | MJD122-TP |
The 131 HSL Epitaxial Planar Transistor is designed for general purpose applications. It features high DC current gain, a built-in damper diode at E-C, and is halogen-free, moisture sensitivity level 1, and RoHS compliant.
| Parameter | Symbol | Rating | Unit | Conditions |
| Continuous Collector Current | IC | 8 | A | @ 25C Unless Otherwise Specified |
| Power Dissipation | 1.5 | W | ||
| Collector-Emitter Voltage | VCEO | 100 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector-Base Voltage | VCBO | 100 | V | |
| Operating Junction Temperature Range | -55 to +150 | C | ||
| Storage Temperature Range | -55 to +150 | C | ||
| Thermal Resistance | 83 | C/W | Junction to Ambient | |
| Collector Cutoff Current | ICEO | 10 | A | VCB=10V, IE=0, f=0.1MHz |
| Collector Cutoff Current | ICBO | 10 | A | VCB=100V, IE=0 |
| Emitter Cutoff Current | IEBO | 10 | A | VEB=5V, IC=0 |
| DC Current Gain | hFE(1) | 1000 to 12000 | IC=30mA, IB=0 | |
| DC Current Gain | hFE(2) | 200 | VCE=4V, IC=4A | |
| Base-Emitter Voltage | VBE | 2.0 | V | IC=4A, IB=16mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 4.5 | V | IC=8A, IB=80mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=8A, IB=80mA | |
| Output Capacitance | Cob | 200 | pF | VCE=4V, IC=4A |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=3mA, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 100 | V | IC=1mA, IE=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 100 | V | IC=1mA, IB=0 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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