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Hefei Purple Horn E-Commerce Co., Ltd.

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China Switching transistor High Diode MMBT4401 semiconductor NPN type in compact SOT23
China Switching transistor High Diode MMBT4401 semiconductor NPN type in compact SOT23

  1. China Switching transistor High Diode MMBT4401 semiconductor NPN type in compact SOT23

Switching transistor High Diode MMBT4401 semiconductor NPN type in compact SOT23

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 300mW
Transition frequency(fT) 250MHz
type NPN
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 40V
Description Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23
Mfr. Part # MMBT4401
Package SOT-23
Model Number MMBT4401

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 100nA
Pd - Power Dissipation 300mW Transition frequency(fT) 250MHz
type NPN Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 40V Description Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23
Mfr. Part # MMBT4401 Package SOT-23
Model Number MMBT4401

Product Overview

The MMBT4401 is a high diode semiconductor NPN switching transistor in a SOT-23 package. It is designed for general-purpose switching applications.

Product Attributes

  • Brand: High Diode Semiconductor
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100A,IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=040V
Emitter-base breakdown voltageV(BR)EBOIE=100A ,IC=06V
Collector cut-off currentICBOVCB=50V,IE=00.1A
Collector cut-off currentICEXVCE=35V, VEB=0.4V0.1A
Emitter cut-off currentIEBOVEB=5V,IC=00.1A
DC current gainhFE1VCE=1V, IC=0.1mA20
hFE2VCE=1V, IC=1mA40
hFE3VCE=1V, IC=10mA80
hFE4VCE=1V, IC=150mA100300
hFE5VCE=2V, IC=500mA40
Collector-emitter saturation voltageVCE(sat)IC=150mA,IB=15mA0.4V
VCE(sat)IC=500mA,IB=50mA0.75V
Base-emitter saturation voltageVBE(satIC=150mA,IB=15mA0.95V
VBE(satIC=500mA,IB=50mA1.2V
Transition frequencyfTVCE=10V, IC=20mA,f =100MHz250MHz
Delay timetdVCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA15ns
Rise timetr20ns
Storage timetsVCC=30V, IC=150mA IB1=IB2=15mA225ns
Fall timetf60ns
Collector Power DissipationPC300mW
Thermal Resistance Junction To AmbientRJA417/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2410121341_High-Diode-MMBT4401_C466634.pdf

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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