| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 625mW |
| Transition frequency(fT) | 80MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃ |
| Description | 625mW NPN 600mA 160V TO-92-3 Single Bipolar Transistors RoHS |
| Mfr. Part # | 2N5551 C |
| Package | TO-92-3 |
| Model Number | 2N5551 C |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 625mW | Transition frequency(fT) | 80MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃ | Description | 625mW NPN 600mA 160V TO-92-3 Single Bipolar Transistors RoHS |
| Mfr. Part # | 2N5551 C | Package | TO-92-3 |
| Model Number | 2N5551 C |
The 2N5551 is an NPN transistor designed for general-purpose applications. It features a power dissipation of 0.625 W (Tamb=25), a collector current of 0.6 A, and a collector-base voltage of 180 V. The operating and storage junction temperature range is -55 to +150.
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| Power dissipation | PCM | Tamb=25 | 0.625 | W | ||
| Collector current | ICM | 0.6 | A | |||
| Collector-base voltage | V(BR)CBO | 180 | V | |||
| Operating and storage junction temperature range | TJTstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | Ic= 100 AIE=0 | 180 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic= 100uA IB=0 | 160 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100A IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 180V IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 4 V IC=0 | 0.1 | A | ||
| DC current gain | hFE1 | VCE= 5 V, IC= 1 mA | 80 | |||
| DC current gain | hFE2 | VCE= 5 V, IC = 10 mA | 80 | 250 | ||
| DC current gain | hFE3 | VCE= 5 V, IC= 50 mA | 50 | |||
| Collector-emitter saturation voltage | VCEsat | IC= 50 mA, IB= 5 mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBEsat | IC= 50 mA, IB= 5 mA | 1 | V | ||
| Transition frequency | fT | VCE= 5 V,IC= 10 mA,,f =30MHz | 80 | MHz |
| Rank | Range |
|---|---|
| A | 80-160 |
| B | 120-180 |
| C | 150-250 |
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |||
|---|---|---|---|---|---|
| Min | Max | Min | Max | ||
| A | 3.300 | 3.700 | 0.130 | 0.146 | |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 | |
| b | 0.380 | 0.550 | 0.015 | 0.022 | |
| c | 0.360 | 0.510 | 0.014 | 0.020 | |
| D | 4.400 | 4.700 | 0.173 | 0.185 | |
| D1 | 3.430 | 4.700 | 0.135 | 0.185 | |
| E | 4.300 | 2.640 | 0.169 | 0.104 | |
| e | 2.440 | 14.100 | 0.096 | 0.555 | |
| e1 | 14.100 | 14.500 | 0.555 | 0.571 | |
| L | 0.000 | 1.600 | 0.000 | 0.063 | |
| 0.380TYP | 0.015TYP | ||||
1. EMITTER
2. BASE
3. COLLECTOR
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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