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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China TO-92 Plastic Encapsulate Transistor HL Haolin Elec 2N5551 C NPN General Purpose
China TO-92 Plastic Encapsulate Transistor HL Haolin Elec 2N5551 C NPN General Purpose

  1. China TO-92 Plastic Encapsulate Transistor HL Haolin Elec 2N5551 C NPN General Purpose

TO-92 Plastic Encapsulate Transistor HL Haolin Elec 2N5551 C NPN General Purpose

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 625mW
Transition frequency(fT) 80MHz
type NPN
Number 1 NPN
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 160V
Operating Temperature -55℃~+150℃
Description 625mW NPN 600mA 160V TO-92-3 Single Bipolar Transistors RoHS
Mfr. Part # 2N5551 C
Package TO-92-3
Model Number 2N5551 C

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Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 100nA
Pd - Power Dissipation 625mW Transition frequency(fT) 80MHz
type NPN Number 1 NPN
Current - Collector(Ic) 600mA Collector - Emitter Voltage VCEO 160V
Operating Temperature -55℃~+150℃ Description 625mW NPN 600mA 160V TO-92-3 Single Bipolar Transistors RoHS
Mfr. Part # 2N5551 C Package TO-92-3
Model Number 2N5551 C

TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN

The 2N5551 is an NPN transistor designed for general-purpose applications. It features a power dissipation of 0.625 W (Tamb=25), a collector current of 0.6 A, and a collector-base voltage of 180 V. The operating and storage junction temperature range is -55 to +150.

Product Attributes

  • Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Material: Plastic-Encapsulate
  • Package Type: TO-92

Technical Specifications

Parameter Symbol Test Conditions MIN TYP MAX UNIT
Power dissipation PCM Tamb=25 0.625 W
Collector current ICM 0.6 A
Collector-base voltage V(BR)CBO 180 V
Operating and storage junction temperature range TJTstg -55 +150
Collector-base breakdown voltage V(BR)CBO Ic= 100 AIE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 100uA IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A IC=0 6 V
Collector cut-off current ICBO VCB= 180V IE=0 0.1 A
Emitter cut-off current IEBO VEB= 4 V IC=0 0.1 A
DC current gain hFE1 VCE= 5 V, IC= 1 mA 80
DC current gain hFE2 VCE= 5 V, IC = 10 mA 80 250
DC current gain hFE3 VCE= 5 V, IC= 50 mA 50
Collector-emitter saturation voltage VCEsat IC= 50 mA, IB= 5 mA 0.5 V
Base-emitter saturation voltage VBEsat IC= 50 mA, IB= 5 mA 1 V
Transition frequency fT VCE= 5 V,IC= 10 mA,,f =30MHz 80 MHz

hFE Classification

Rank Range
A 80-160
B 120-180
C 150-250

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.400 4.700 0.173 0.185
D1 3.430 4.700 0.135 0.185
E 4.300 2.640 0.169 0.104
e 2.440 14.100 0.096 0.555
e1 14.100 14.500 0.555 0.571
L 0.000 1.600 0.000 0.063
0.380TYP 0.015TYP

TO-92 Pinout

1. EMITTER
2. BASE
3. COLLECTOR


2410121242_HL-Haolin-Elec-2N5551-C_C237266.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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