| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | - |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 200mA 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA44 |
| Package | SOT-23 |
| Model Number | MMBTA44 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 350mW | Transition frequency(fT) | - |
| type | NPN | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 400V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 200mA 350mW Surface Mount SOT-23 | Mfr. Part # | MMBTA44 |
| Package | SOT-23 | Model Number | MMBTA44 |
High Diode Semiconductor MMBTA44 is a NPN transistor in a SOT-23 package, designed for high voltage applications. It offers a high collector-emitter voltage of 400V and is suitable for various electronic circuits requiring robust voltage handling.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
| Collector-Base Voltage | V | 400 | V | ||||
| Collector-Emitter Voltage | VCEO | 400 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current | IC | 200 | mA | ||||
| Collector Power Dissipation | PC | 350 | mW | ||||
| Thermal Resistance Junction To Ambient | RJA | 357 | /W | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -55+150 | |||||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 400 | V | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO* | IC=1mA, IB=0 | 400 | V | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | |||
| Collector Cut-off Current | ICBO | VCB=400V, IE=0 | 0.1 | A | |||
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 0.1 | A | |||
| DC Current Gain | hFE(1) | VCE=10V, IC=1mA | 40 | ||||
| DC Current Gain | hFE(2) | VCE=10V, IC=10mA | 50 | 200 | |||
| DC Current Gain | hFE(3) | VCE=10V, IC=50mA | 45 | ||||
| DC Current Gain | hFE(4) | VCE=10V, IC=100mA | 40 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat)1* | IC=1mA, IB=0.1mA | 0.4 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat)2* | IC=10mA, IB=1mA | 0.5 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat)3* | IC=50mA, IB=5mA | 0.75 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=10mA, IB=1mA | 0.75 | V | |||
| Collector Output Capacitance | Cob | VCB=20V, IE=0, f=1MHz | 7 | pF | |||
| Emitter Input Capacitance | Cib | VEB=0.5V, IC=0, f=1MHz | 130 | pF | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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