Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.2V |
| Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 160mW |
| Transition frequency(fT) | 44GHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 45mA |
| Collector - Emitter Voltage VCEO | 4V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4V 45mA 44GHz 160mW Surface Mount SOT-343-4 |
| Mfr. Part # | BFP740H6327 |
| Package | SOT-343-4 |
| Model Number | BFP740H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.2V | Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 160mW | Transition frequency(fT) | 44GHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 45mA | Collector - Emitter Voltage VCEO | 4V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 4V 45mA 44GHz 160mW Surface Mount SOT-343-4 |
| Mfr. Part # | BFP740H6327 | Package | SOT-343-4 |
| Model Number | BFP740H6327 |
The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless communication, satellite, multimedia, and ISM applications.
| Parameter | Symbol | Values | Unit | Note or test condition | ||||||
| Absolute Maximum Ratings | ||||||||||
| Collector emitter voltage | VCEO | 4.0 | V | Open base, TA = 25 C | ||||||
| Collector emitter voltage | VCES | 13 | V | E-B short circuited | ||||||
| Collector base voltage | VCBO | 13 | V | Open emitter | ||||||
| Emitter base voltage | VEBO | 1.2 | V | Open collector | ||||||
| Base current | IB | 4 | mA | |||||||
| Collector current | IC | 45 | mA | |||||||
| Total power dissipation | Ptot | 160 | mW | TS 100 C | ||||||
| Junction temperature | TJ | 150 | C | |||||||
| Storage temperature | TStg | -55 to 150 | C | |||||||
| Thermal Characteristics | ||||||||||
| Junction - soldering point thermal resistance | RthJS | 310 | K/W | |||||||
| DC Characteristics | ||||||||||
| Collector emitter breakdown voltage | V(BR)CEO | 4.0 / 4.7 | V | IC = 1 mA, IB = 0, open base | ||||||
| Collector emitter leakage current | ICES | 1 / 400 | nA | VCE = 13 V, VBE = 0 / VCE = 5 V, VBE = 0, E-B short circuited | ||||||
| Collector base leakage current | ICBO | 1 / 40 | nA | VCB = 5 V, IE = 0, open emitter | ||||||
| Emitter base leakage current | IEBO | 1 / 40 | nA | VEB = 0.5 V, IC = 0, open collector | ||||||
| DC current gain | hFE | 160 to 400 | VCE = 3 V, IC = 25 mA, pulse measured | |||||||
| General AC Characteristics | ||||||||||
| Transition frequency | fT | 44 | GHz | VCE = 3 V, IC = 25 mA, f = 2 GHz | ||||||
| Collector base capacitance | CCB | 0.08 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded | ||||||
| Collector emitter capacitance | CCE | 0.35 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded | ||||||
| Emitter base capacitance | CEB | 0.45 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded | ||||||
| Frequency Dependent AC Characteristics (VCE = 3 V, ZS = ZL = 50 ) | ||||||||||
| Parameter | Symbol | f = 450 MHz | f = 900 MHz | f = 1.5 GHz | f = 1.9 GHz | f = 2.4 GHz | f = 3.5 GHz | f = 5.5 GHz | Unit | Note or test condition |
| Maximum power gain | Gms | 31.5 | 28 | 26 | 25 | 24 | 22 | 19.5 | dB | IC = 15 mA |
| Minimum noise figure | NFmin | 0.45 | 0.45 | 0.5 | 0.5 | 0.55 | 0.65 | 0.85 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | 22 | 22.5 | 23 | 24.5 | 24.5 | 25.5 | 24.5 | dBm | IC = 15 mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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