Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 10nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT2222A |
| Package | SOT-23 |
| Model Number | MMBT2222A |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 10nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 300MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 300mW Surface Mount SOT-23 | Mfr. Part # | MMBT2222A |
| Package | SOT-23 | Model Number | MMBT2222A |
The MMBT2222A is an NPN epitaxial planar die construction transistor designed for general-purpose applications. It offers a complementary PNP type, the MMBT2907A. This device is packaged in a SOT-23 package, making it suitable for surface mount applications.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current | 600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| V(BR)CBO | Collector-base breakdown voltage | IC= 10A, IE=0 | 75 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC= 10mA, IB=0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB=60V, IE=0 | 0.01 | A | ||
| ICEX | Collector cut-off current | VCE=30V,VBE(off)=3V | 0.01 | A | ||
| IEBO | Emitter cut-off current | VEB= 3V, IC=0 | 0.1 | A | ||
| hFE(1) | DC current gain | VCE=10V, IC= 150mA | 100 | 300 | ||
| hFE(2) | DC current gain | VCE=10V, IC= 0.1mA | 40 | |||
| hFE(3) | DC current gain | VCE=10V, IC= 500mA | 42 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=500 mA, IB= 50mA | 1.0 | V | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=150 mA, IB=15mA | 0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=500 mA, IB= 50mA | 2.0 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=150 mA, IB=15mA | 1.2 | V | ||
| fT | Transition frequency | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | ||
| td | Delay time | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 10 | ns | ||
| tr | Rise time | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 25 | ns | ||
| tS | Storage time | VCC=30V, IC=150mA IB1=-IB2=15mA | 225 | ns | ||
| tf | Fall time | VCC=30V, IC=150mA IB1=-IB2=15mA | 60 | ns | ||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!