| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT5401 |
| Package | SOT-23 |
| Model Number | MMBT5401 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 100MHz |
| type | PNP | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 300mW Surface Mount SOT-23 | Mfr. Part # | MMBT5401 |
| Package | SOT-23 | Model Number | MMBT5401 |
The MMBT5401 is a high diode semiconductor transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications. This NPN transistor is complementary to the MMBT5551.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | -150 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current | -600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 416 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=-100A, IE=0 | -160 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA, IB=0 | -150 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A, IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-120V, IE=0 | -0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=-4V, IC=0 | -0.1 | A | ||
| hFE(1) | DC current gain | VCE=-5V, IC=-1mA | 80 | |||
| hFE(2) | DC current gain | VCE=-5V, IC=-10mA | 100 | 300 | ||
| hFE(3) | DC current gain | VCE=-5V, IC=-50mA | 50 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC=-10mA, IB=-1mA | -0.2 | V | ||
| VCE(sat)2 | Collector-emitter saturation voltage | IC=-50mA, IB=-5mA | -0.5 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC=-10mA, IB=-1mA | -1 | V | ||
| VBE(sat)2 | Base-emitter saturation voltage | IC=-50mA, IB=-5mA | -1 | V | ||
| fT | Transition frequency | VCE=-5V,IC=-10mA, f=30MHz | 100 | MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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