| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | BC848C |
| Package | SOT-23 |
| Model Number | BC848C |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 30V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 200mW Surface Mount SOT-23 | Mfr. Part # | BC848C |
| Package | SOT-23 | Model Number | BC848C |
General-purpose NPN transistors in a plastic-encapsulate package, designed for AF applications. These transistors offer high collector current, high current gain, and low collector-emitter saturation voltage, making them suitable for various audio frequency circuits.
| Model | Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| BC846 | Collector-Base Voltage | VCBO | 80 | V | |||
| Collector-Emitter Voltage | VCEO | 65 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current -Continuous | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC | 0.2 | W | ||||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature | Tstg | -55 | +150 | C | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 80 | V | |||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 65 | V | |||
| Collector cut-off current | ICBO | VCB=70 V , IE=0 | 0.1 | A | |||
| Collector cut-off current | ICEO | VCE=60 V , IB=0 | 0.1 | A | |||
| BC847 | Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current -Continuous | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC | 0.2 | W | ||||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature | Tstg | -55 | +150 | C | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 50 | V | |||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 45 | V | |||
| Collector cut-off current | ICBO | VCB=50 V , IE=0 | 0.1 | A | |||
| Collector cut-off current | ICEO | VCE=45 V , IB=0 | 0.1 | A | |||
| BC848 | Collector-Base Voltage | VCBO | 30 | V | |||
| Collector-Emitter Voltage | VCEO | 30 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current -Continuous | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC | 0.2 | W | ||||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature | Tstg | -55 | +150 | C | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 30 | V | |||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 30 | V | |||
| Collector cut-off current | ICBO | VCB=30 V , IE=0 | 0.1 | A | |||
| Collector cut-off current | ICEO | VCE=30 V , IB=0 | 0.1 | A | |||
| All Models | Emitter cut-off current | IEBO | VEB=5 V , IC=0 | 0.1 | A | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB= 5mA | 0.5 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB= 5mA | 1.1 | V | |||
| Transition frequency | fT | VCE= 5 V, IC= 10mA f=100MHz | 100 | MHz | |||
| BC846A,847A,848A | DC current gain | hFE | VCE= 5V, IC= 2mA | 110 | |||
| BC846B,847B,848B | DC current gain | hFE | VCE= 5V, IC= 2mA | 200 | |||
| BC847C,BC848C | DC current gain | hFE | VCE= 5V, IC= 2mA | 420 | |||
| All Models | Collector output capacitance | Cob | VCB=10V,f=1MHz | 4.5 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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