Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 8GHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 10V |
| Description | Bipolar (BJT) Transistor NPN 10V 100mA 8GHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | FCS957 |
| Package | SOT-323 |
| Model Number | FCS957 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 1.5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 8GHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 100mA | Collector - Emitter Voltage VCEO | 10V |
| Description | Bipolar (BJT) Transistor NPN 10V 100mA 8GHz 200mW Surface Mount SOT-323 | Mfr. Part # | FCS957 |
| Package | SOT-323 | Model Number | FCS957 |
The FCS957 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain and low noise characteristics. Its ultra-small SOT-323 package makes it ideal for high-density surface mount applications, primarily used in VHF and UHF low-noise amplifiers.
| Parameter | Symbol | Min | Typical | Max | Unit | Test Condition |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Breakdown Voltage | VEBO | 1.5 | V | |||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | hFE | 90 | 150 | 250 | VCE=6V, IC=30mA | |
| Transition Frequency | fT | 8 | GHz | VCE=6V, IC=30mA, f=1GHz | ||
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V, IE=0mA, f=1MHz | ||
| Power Gain | | S21e | | 12 | dB | VCE=6V, IC=30mA, f=1GHz | ||
| Noise Figure | NF | 1.5 | dB | VCE=6V, IC=5mA, f=1GHz | ||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!