Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 2V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 8GHz |
| type | NPN |
| Current - Collector(Ic) | 35mA |
| Collector - Emitter Voltage VCEO | 12V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | BFR182E6327 |
| Package | SOT-23 |
| Model Number | BFR182E6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 2V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 8GHz |
| type | NPN | Current - Collector(Ic) | 35mA |
| Collector - Emitter Voltage VCEO | 12V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23 | Mfr. Part # | BFR182E6327 |
| Package | SOT-23 | Model Number | BFR182E6327 |
The BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component is Pb-free (RoHS compliant) and a qualification report according to AEC-Q101 is available. It is an ESD sensitive device and requires careful handling.
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 12 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2 | V | |
| Collector current | IC | 35 | mA | |
| Base current | IB | 3 | mA | |
| Total power dissipation | Ptot | 250 | mW | TS 93 C |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Junction - soldering point Thermal Resistance | RthJS | 230 | K/W | |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 100 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 10 mA, VCE = 8 V, pulse measured |
| AC Characteristics | ||||
| Transition frequency | fT | 6 - 8 | GHz | IC = 15 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.32 - 0.5 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.2 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 0.8 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 0.9 | dB | IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz |
| Minimum noise figure | NFmin | 1.3 | dB | IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz |
| Power gain, maximum available | Gma | 18 | - | IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz |
| Power gain, maximum available | Gma | 12 | - | IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| Transducer gain | |S21e| | 15 | dB | IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
| Transducer gain | |S21e| | 9.5 | dB | IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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