Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 2V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 175mW |
| Transition frequency(fT) | 8GHz |
| type | NPN |
| Current - Collector(Ic) | 20mA |
| Collector - Emitter Voltage VCEO | 12V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-363 |
| Mfr. Part # | BFS481H6327XTSA1 |
| Package | SOT-363 |
| Model Number | BFS481H6327XTSA1 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 2V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 175mW | Transition frequency(fT) | 8GHz |
| type | NPN | Current - Collector(Ic) | 20mA |
| Collector - Emitter Voltage VCEO | 12V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-363 | Mfr. Part # | BFS481H6327XTSA1 |
| Package | SOT-363 | Model Number | BFS481H6327XTSA1 |
The BFS481 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It features two internally isolated transistors in a single package, offering fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is suitable for collector currents ranging from 0.5 mA to 12 mA and is provided in an industry-standard, Pb-free (RoHS compliant) and halogen-free SOT363 package with visible leads, making it easy to use. Qualification reports according to AEC-Q101 are available.
| Parameter | Symbol | Value | Unit | Notes | ||
| Maximum Ratings | VCEO | 12 | V | TA = 25 C, unless otherwise specified | ||
| VCES | 20 | V | TA = 25 C, unless otherwise specified | |||
| VCBO | 20 | V | TA = 25 C, unless otherwise specified | |||
| VEBO | 2 | V | TA = 25 C, unless otherwise specified | |||
| IC | 20 | mA | TA = 25 C, unless otherwise specified | |||
| IB | 2 | mA | TA = 25 C, unless otherwise specified | |||
| Ptot | 175 | mW | TS 83 C, TA = 25 C, unless otherwise specified | |||
| TJ | 150 | C | TA = 25 C, unless otherwise specified | |||
| TStg | -55 ... 150 | C | TA = 25 C, unless otherwise specified | |||
| RthJS | 380 | K/W | Junction - soldering point | |||
| Electrical Characteristics | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | ||
| ICES | - | 100 | A | VCE = 20 V, VBE = 0 | ||
| ICBO | - | 100 | nA | VCB = 10 V, IE = 0 | ||
| IEBO | - | 1 | A | VEB = 1 V, IC = 0 | ||
| hFE | 70 | 100 | 140 | IC = 5 mA, VCE = 8 V, pulse measured | ||
| fT | 6 | 8 | GHz | IC = 10 mA, VCE = 8 V, f = 500 MHz | ||
| Ccb | - | 0.23 | 0.4 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | |
| Cce | - | 0.13 | - | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded | |
| AC Characteristics | Ceb | - | 0.4 | - | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| NFmin | - | 0.9 | 1.2 | dB | IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz | |
| Gms | - | 20 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz | |
| Gma | - | 15 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz | |
| |S21e| | - | 16 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz | |
| |S21e| | - | 11 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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