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Hefei Purple Horn E-Commerce Co., Ltd.

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China Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear
China Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear

  1. China Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear

Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear

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Emitter-Base Voltage(Vebo) 2V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 580mW
Transition frequency(fT) 8GHz
type NPN
Current - Collector(Ic) 80mA
Collector - Emitter Voltage VCEO 12V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-323
Mfr. Part # BFR193WH6327
Package SOT-323
Model Number BFR193WH6327

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Product Specification

Emitter-Base Voltage(Vebo) 2V Current - Collector Cutoff 100nA
Pd - Power Dissipation 580mW Transition frequency(fT) 8GHz
type NPN Current - Collector(Ic) 80mA
Collector - Emitter Voltage VCEO 12V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-323 Mfr. Part # BFR193WH6327
Package SOT-323 Model Number BFR193WH6327

Product Overview

The BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with an AEC-Q101 qualification report. It is an ESD sensitive device and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Model: BFR193W
  • Package: SOT323
  • Certifications: AEC-Q101 (Qualification report available), RoHS compliant
  • Material: Silicon Bipolar

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-emitter voltageVCEO12V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO2V
Collector currentIC80mA
Base currentIB10mA
Total power dissipationPtot580mWTS 63C
Junction temperatureTJ150C
Storage temperatureTStg-55 ... 150C
Thermal Resistance Junction - soldering pointRthJS150K/WTS is measured on the collector lead at the soldering point to the pcb
Collector-emitter breakdown voltageV(BR)CEO12VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES100AVCE = 20 V, VBE = 0
Collector-base cutoff currentICBO100nAVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO1AVEB = 1 V, IC = 0
DC current gainhFE70 - 140-IC = 30 mA, VCE = 8 V, pulse measured
Transition frequencyfT6 - 8GHzIC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.74pFVCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitanceCce0.28pFVCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitanceCeb1.8pFVEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figureNFmin1 - 1.6dBIC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum availableGma16 - 10.5-IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain|S21e|13.5 - 8dBIC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz
Third order intercept point at outputIP330dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
1dB Compression pointP-1dB13dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz

2410121734_Infineon-BFR193WH6327_C152683.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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