Ecer asks for your consent to use your personal data to:
Personalised advertising and content, advertising and content measurement, audience research and services development
Store and/or access information on a device
Your personal data will be processed and information from your device (cookies, unique identifiers, and other device data) may be stored by, accessed by and shared with 135 TCF vendor(s) and 65 ad partner(s), or used specifically by this site or app.
Some vendors may process your personal data on the basis of legitimate interest, which you can object to by do not consent. Contact our platform customer service, you can also withdraw your consent.
Your message must
be between 20-3,000 characters!
Submit Requirement
Thank You!
Your requirement has been sent. we will contact you quickly!
{"title":"Power Transistor ISC 2SA940 Silicon PNP Type Designed for Amplifier and Vertical","imgUrl":"https:\/\/img.chinax.com\/nimg\/72\/bf\/9042418126b9b3344785a38729b7-200x200-1\/power_transistor_isc_2sa940_silicon_pnp_type_designed_for_amplifier_and_vertical.jpg","attrs":{"Description":"TO-220C Single Bipolar Transistors RoHS","Mfr. Part #":"2SA940","Model Number":"2SA940","Package":"TO-220C"}}
{"title":"General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP","imgUrl":"https:\/\/img.chinax.com\/nimg\/42\/2a\/b0becc5b28fea620926de6cda198-200x200-1\/general_purpose_power_amplification_transistor_blue_rocket_njw0302gc_silicon_pnp_type_in_to3p_plastic_package.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"5V","Current - Collector Cutoff":"5uA","Pd - Power Dissipation":"150W","Transition frequency(fT)":"30MHz"}}
{"title":"NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for","imgUrl":"https:\/\/img.chinax.com\/nimg\/17\/fb\/4bb3b32b3b946f3d1bc8e6a04bb4-200x200-1\/npn_transistor_cbi_mmbt3904_sot23_package_epitaxial_planar_die_construction_for_electronic_circuits.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"6V","Current - Collector Cutoff":"100nA","Pd - Power Dissipation":"200mW","Transition frequency(fT)":"300MHz"}}
{"title":"NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation","imgUrl":"https:\/\/img.chinax.com\/nimg\/b5\/de\/e084c254f3a240e0cf81429ca92b-200x200-1\/npn_bipolar_transistor_guangdong_hottech_2sc1623_l5_with_200mw_power_dissipation_and_sot23_package.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"5V","Current - Collector Cutoff":"100nA","Pd - Power Dissipation":"200mW","Transition frequency(fT)":"250MHz"}}
{"title":"Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency","imgUrl":"https:\/\/img.chinax.com\/nimg\/b8\/50\/5f3a1ad633bd298a7437a9f54e10-200x200-1\/jilin_sino_microelectronics_3dd13003a_126_npn_transistor_for_high_frequency_switching_power_supplies.jpg","attrs":{"Current - Collector Cutoff":"100uA","Pd - Power Dissipation":"40W","Transition frequency(fT)":"4MHz","type":"NPN"}}
{"title":"Durable NPN silicon transistor Minos TIP41C designed for audio power amplificati","imgUrl":"https:\/\/img.chinax.com\/nimg\/c1\/be\/c836fb0995bb5a040222d4e9c5d2-200x200-1\/durable_npn_silicon_transistor_minos_tip41c_designed_for_audio_power_amplification_in_to220_package.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"5V","Current - Collector Cutoff":"1mA","Pd - Power Dissipation":"65W","Transition frequency(fT)":"3MHz"}}
{"title":"Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and","imgUrl":"https:\/\/img.chinax.com\/nimg\/3f\/29\/22577e6d1c8889e56525f0c26ee9-200x200-1\/automotive_grade_npn_transistor_yangjie_mmbt3904q_with_ul94_v0_flammability_and_aecq101_qualification.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"6V","Current - Collector Cutoff":"50nA","DC Current Gain":"300@10mA,1V","Vce Saturation(VCE(sat))":"300mV@50mA,5mA"}}
The 2SA940 is a PNP power transistor designed for general-purpose power amplifier and vertical output applications. It offers a high collector-emitter breakdown voltage of -150V and a DC current gain ranging from 40 to 140 at -0.5A. This transistor is a complement to the 2SC2073 type, ensuring robust device performance and reliable operation with minimal lot-to-lot variations.