Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 30nA |
| Pd - Power Dissipation | 700mW |
| Transition frequency(fT) | 3.5GHz |
| type | NPN |
| Current - Collector(Ic) | 210mA |
| Collector - Emitter Voltage VCEO | 16V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 16V 210mA 3.5GHz 700mW Surface Mount SOT-23 |
| Mfr. Part # | BFR106E6327 |
| Package | SOT-23 |
| Model Number | BFR106E6327 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 30nA |
| Pd - Power Dissipation | 700mW | Transition frequency(fT) | 3.5GHz |
| type | NPN | Current - Collector(Ic) | 210mA |
| Collector - Emitter Voltage VCEO | 16V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 16V 210mA 3.5GHz 700mW Surface Mount SOT-23 | Mfr. Part # | BFR106E6327 |
| Package | SOT-23 | Model Number | BFR106E6327 |
The BFR106 is a low-noise silicon bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadband and antenna amplifiers. The collector design supports a 5 V supply voltage, and it comes in a Pb-free (RoHS compliant) SOT23 package. Qualification is available according to AEC-Q101.
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage, TA = 25C | VCEO | 16 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 3 | V | |
| Collector current | IC | 210 | mA | |
| Base current | IB | 21 | mA | |
| Total power dissipation | Ptot | 700 | mW | TS 76 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 105 | K/W | Measured on the collector lead at the soldering point to the pcb |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 0.001 | A | VCE = 20 V, VBE = 0 |
| Collector-emitter cutoff current | ICES | 1 | A | VCE = 10 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 0.03 | A | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 2 V, IC = 0 |
| DC current gain | hFE | 70 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| DC current gain | hFE | 100 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| DC current gain | hFE | 140 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| AC Characteristics | ||||
| Transition frequency | fT | 3.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Transition frequency | fT | 5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.85 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector-base capacitance | Ccb | 1.2 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector emitter capacitance | Cce | 0.27 | pF | VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded |
| Emitter-base capacitance | Ceb | 3.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
| Minimum noise figure | NFmin | 1.8 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz |
| Minimum noise figure | NFmin | 3 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz |
| Power gain, maximum available | Gma | 13 | dB | IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz |
| Power gain, maximum available | Gma | 8.5 | dB | IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| Transducer gain | |S21e| | 10.5 | dB | IC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
| Transducer gain | |S21e| | 5 | dB | IC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz |
| Third order intercept point at output | IP3 | 31 | dBm | VCE = 8 V, IC = 70 mA, f = 0.9 GHz , ZS=ZL=50 |
| 1dB compression point | P-1dB | 22 | dBm | IC = 70 mA, VCE = 8 V, ZS=ZL=50, f = 0.9 GHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!