Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.2V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 500mW |
| Transition frequency(fT) | 42GHz |
| type | NPN |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 4V |
| Description | Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW TSFP-4 |
| Mfr. Part # | BFP 650F H6327 |
| Package | TSFP-4 |
| Model Number | BFP 650F H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.2V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 500mW | Transition frequency(fT) | 42GHz |
| type | NPN | Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 4V | Description | Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW TSFP-4 |
| Mfr. Part # | BFP 650F H6327 | Package | TSFP-4 |
| Model Number | BFP 650F H6327 |
The BFP650F is a low-profile NPN RF bipolar transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 GHz and excellent linearity, making it suitable for oscillator applications. This device provides a cost-effective solution without compromising ease of use.
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | ||||
| Collector emitter voltage | VCEO | 4.0 | V | Open base; TA = -55 C, open base: 3.7 V |
| Collector emitter voltage | VCES | 13 | V | E-B short circuited |
| Collector base voltage | VCBO | 13 | V | Open emitter |
| Emitter base voltage | VEBO | 1.2 | V | Open collector |
| Base current | IB | 10 | mA | |
| Collector current | IC | 150 | mA | |
| Total power dissipation | Ptot | 500 | mW | TS 85 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 130 | K/W | |
| DC Characteristics | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 4 | V | IC = 3 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 100 | A | VCE = 13 V, VBE = 0, E-B short circuited; Maximum values not limited by the device but by the short cycle time of the 100% test. |
| Collector base leakage current | ICBO | 100 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 10 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 110 - 270 | VCE = 3 V, IC = 80 mA, pulse measured | |
| General AC Characteristics | ||||
| Transition frequency | fT | 42 | GHz | VCE = 3 V, IC = 80 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.26 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.45 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 1.3 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| AC Characteristics (VCE = 3 V, f = 1.8 GHz) | ||||
| Maximum power gain | Gms | 21.5 | dB | IC = 80 mA |
| Transducer gain | |S21| | 17.5 | dB | IC = 80 mA |
| Minimum noise figure | NFmin | 0.8 | dB | IC = 10 mA |
| 3rd order intercept point at output | OIP3 | 31 | dBm | IC = 80 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 17.5 | dBm | IC = 80 mA |
| AC Characteristics (VCE = 3 V, f = 6 GHz) | ||||
| Maximum power gain | Gms | 11 | dB | IC = 80 mA |
| Transducer gain | |S21| | 7.5 | dB | IC = 80 mA |
| Minimum noise figure | NFmin | 1.9 | dB | IC = 10 mA |
| Device Information | ||||
| Product name / Ordering code | BFP650F / BFP650FH6327XTSA1 | |||
| Package | TSFP-4-1 | |||
| Pin configuration | 1 = B, 2 = E, 3 = C, 4 = E | |||
| Marking | R5s | |||
| Pieces / Reel | 3000 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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