Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1W |
| Transition frequency(fT) | 5.5GHz |
| type | NPN |
| Current - Collector(Ic) | 120mA |
| Collector - Emitter Voltage VCEO | 15V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 15V 120mA 5.5GHz 1W Surface Mount SOT-89-3 |
| Mfr. Part # | BFQ19SH6327 |
| Package | SOT-89-3 |
| Model Number | BFQ19SH6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1W | Transition frequency(fT) | 5.5GHz |
| type | NPN | Current - Collector(Ic) | 120mA |
| Collector - Emitter Voltage VCEO | 15V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 15V 120mA 5.5GHz 1W Surface Mount SOT-89-3 | Mfr. Part # | BFQ19SH6327 |
| Package | SOT-89-3 | Model Number | BFQ19SH6327 |
The BFQ19S is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging from 10 mA to 70 mA. This transistor is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101.
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 15 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 3 | V | |
| Collector current | IC | 120 | mA | |
| Base current | IB | 12 | mA | |
| Total power dissipation (TS 85C) | Ptot | 1 | W | |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance (Junction - soldering point) | RthJS | 65 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics (TA = 25 C, unless otherwise specified) | ||||
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 10 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 100 | A | VEB = 2 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| AC Characteristics (verified by random sampling) | ||||
| Transition frequency | fT | 4 - 5.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 1.05 - 1.35 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.4 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 3.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.8 - 3 | dB | IC = 20 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 11.5 - 7 | - | IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 9.5 - 4 | dB | IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz |
| Third order intercept point at output | IP3 | 32 | dBm | VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| 1dB Compression point | P-1dB | 22 | dBm | VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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