Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.2V |
| Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 240mW |
| Transition frequency(fT) | 45GHz |
| type | NPN |
| Current - Collector(Ic) | 70mA |
| Collector - Emitter Voltage VCEO | 4V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343 |
| Mfr. Part # | BFP760H6327 |
| Package | SOT-343 |
| Model Number | BFP760H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.2V | Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 240mW | Transition frequency(fT) | 45GHz |
| type | NPN | Current - Collector(Ic) | 70mA |
| Collector - Emitter Voltage VCEO | 4V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343 | Mfr. Part # | BFP760H6327 |
| Package | SOT-343 | Model Number | BFP760H6327 |
The BFP760 is a low-noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF and protection device applications.
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
| Collector Current vs. Collector Emitter Voltage | IC = f (VCE) | IB = Parameter in A | 15 | ||||
| DC Current Gain | hFE = f (IC) | VCE = 3 V | 15 | ||||
| Collector Current vs. Base Emitter Voltage | IC = f (VBE) | VCE = 2 V | 16 | ||||
| Base Current vs. Base Emitter Forward Voltage | IB = f (VBE) | VCE = 2 V | 16 | ||||
| Base Current vs. Base Emitter Reverse Voltage | IB = f (VEB) | VCE = 2 V | 17 | ||||
| Transition Frequency | fT = f (IC) | GHz | f = 1 GHz, VCE = Parameter in V | 18 | |||
| 3rd Order Intercept Point | OIP3 = f (IC) | dBm | ZS = ZL= 50 , VCE, f = Parameters | 18 | |||
| 3rd Order Intercept Point at output | OIP3 [dBm] = f (IC, VCE) | dBm | ZS = ZL = 50 , f = 5.5 GHz | 19 | |||
| Compression Point at output | OP1dB [dBm] = f (IC, VCE) | dBm | ZS = ZL = 50 , f = 5.5 GHz | 19 | |||
| Collector Base Capacitance | CCB = f (VCB) | pF | f = 1 MHz | 20 | |||
| Gain | Gma, Gms, IS21I = f (f) | VCE = 3 V, IC = 30 mA | 20 | ||||
| Maximum Power Gain | Gmax = f (IC) | dB | VCE = 3 V, f = Parameter in GHz | 21 | |||
| Maximum Power Gain | Gmax = f (VCE) | dB | IC = 30 mA, f = Parameter in GHz | 21 | |||
| Input Reflection Coefficient | S11 = f (f) | VCE = 3 V, IC = 10 / 30 mA | 22 | ||||
| Source Impedance for Minimum Noise Figure | Zopt = f (f) | VCE = 3 V, IC = 10 / 30 mA | 22 | ||||
| Output Reflection Coefficient | S22 = f (f) | VCE = 3 V, IC = 10 / 30 mA | 23 | ||||
| Noise Figure min | NFmin = f (f) | dB | VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt | 23 | |||
| Noise Figure min | NFmin = f (IC) | dB | VCE = 3 V, ZS = Zopt, f = Parameter in GHz | 24 | |||
| Noise Figure 50 Ohm | NF50 = f (IC) | dB | VCE = 3 V, ZS = 50 , f = Parameter in GHz | 24 | |||
| Maximum Ratings | TA = 25 C (unless otherwise specified) | 6 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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