| Emitter-Base Voltage(Vebo) | 1.5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 210mW |
| Transition frequency(fT) | 25GHz |
| type | NPN |
| Current - Collector(Ic) | 60mA |
| Collector - Emitter Voltage VCEO | 4.5V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4.5V 60mA 25GHz 210mW Surface Mount SOT-343 |
| Mfr. Part # | BFP420H6327 |
| Package | SOT-343 |
| Model Number | BFP420H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 210mW | Transition frequency(fT) | 25GHz |
| type | NPN | Current - Collector(Ic) | 60mA |
| Collector - Emitter Voltage VCEO | 4.5V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4.5V 60mA 25GHz 210mW Surface Mount SOT-343 | Mfr. Part # | BFP420H6327 |
| Package | SOT-343 | Model Number | BFP420H6327 |
The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF applications.
| Parameter | Symbol | Values | Unit | Note or test condition |
|---|---|---|---|---|
| Minimum noise figure | NFmin | 1.1 | dB | at 1.8 GHz, 2 V, 5 mA |
| High gain (Maximum power gain) | Gms | 21 | dB | at 1.8 GHz, 2 V, 20 mA |
| 3rd order intercept point at output | OIP3 | 22 | dBm | at 1.8 GHz, 2 V, 20 mA, ZS = ZL = 50 |
| Transition frequency | fT | 25 | GHz | VCE = 3 V, IC = 30 mA, f = 2 GHz |
| Collector base capacitance | CCB | 0.15 - 0.3 | pF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.37 | - | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.55 | - | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| DC current gain | hFE | 60 - 130 | - | VCE = 4 V, IC = 20 mA, pulse measured |
| Collector emitter breakdown voltage | V(BR)CEO | 4.5 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | - - 10 | A | VCE = 15 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | - 100 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | - 3 | A | VEB = 0.5 V, IC = 0, open collector |
| Total power dissipation | Ptot | 210 | mW | TS 98 C |
| Junction temperature | TJ | 150 | C | - |
| Storage temperature | TStg | -55 - 150 | C | - |
| Product name / Ordering code | Package | Pin configuration | Marking | Pieces / Reel |
|---|---|---|---|---|
| BFP420 / BFP420H6327XTSA1 | SOT343 | 1 = B, 2 = E, 3 = C, 4 = E | AMs | 3000 |
| BFP420 / BFP420H6433XTMA1 | SOT343 | 1 = B, 2 = E, 3 = C, 4 = E | AMs | 10000 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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