Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | - |
| Pd - Power Dissipation | 380mW |
| Transition frequency(fT) | 14GHz |
| type | - |
| Current - Collector(Ic) | 80mA |
| Collector - Emitter Voltage VCEO | 6V |
| Description | 380mW 80mA 6V TSLP-3 Single Bipolar Transistors RoHS |
| Mfr. Part # | BFR 380L3 E6327 |
| Package | TSLP-3 |
| Model Number | BFR 380L3 E6327 |
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Product Specification
| Current - Collector Cutoff | - | Pd - Power Dissipation | 380mW |
| Transition frequency(fT) | 14GHz | type | - |
| Current - Collector(Ic) | 80mA | Collector - Emitter Voltage VCEO | 6V |
| Description | 380mW 80mA 6V TSLP-3 Single Bipolar Transistors RoHS | Mfr. Part # | BFR 380L3 E6327 |
| Package | TSLP-3 | Model Number | BFR 380L3 E6327 |
Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. Designed for increasing data traffic and connectivity demands in mobile systems and infrastructure, these transistors provide superior performance, versatility, and supply security. They are crucial for enabling stable and reliable wireless reception and transmission across multiple bands, supporting applications like small cells, automotive infotainment, and navigation.
| Generation | Key Features | Technical Benefits | Customer Benefits | fT (max) | NFmin (dB) | Frequency Range | Gmax (dB) |
| 7th Generation | High transition frequency, high gain, high linearity, high maximum RF input power, 1.5 kV HBM ESD robustness, reduced power consumption | Improved system sensitivity, enhanced interference immunity, wider coverage areas, higher order modulation support, increased RF link budget and SNR, energy savings, extended battery life, improved high input power robustness | Easy-to-use discrete Heterojunction Bipolar Transistors (HBT) for single- and dual-band Low-Noise Amplifier (LNA) solutions in WiFi connectivity. Suitable as gain block for buffer/driver amplifiers, mixer, or VCO for frequencies > 10 GHz. | 44 GHz | 0.45 dB (sub-GHz), 0.9 dB (5.5 GHz) | 450 MHz to 12 GHz | 19 dB (at 10 GHz) |
| 8th Generation | Best-in-class performance, optimized device geometry, improved BiC in relation to NF and power gain Gmax | Increased RF link budget and Signal-to-Noise Ratio (SNR), improved system sensitivity, interference immunity enhancement, superior linearity compared to market solutions. | High-performance discrete Heterojunction Bipolar Transistors (HBT) for dual- and fixed-frequency Low-Noise Amplifier (LNA) solutions in high-performance WiFi connectivity. Enables higher order modulation schemes for very high throughput wireless specifications. | 80 GHz | 0.5 dB (best in class) | Not specified, but implied for high-frequency WiFi applications | Not specified, but implied to be highest |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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